HL-Haolin-Elec-HL2300

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD  

SOT-23 Plastic-Encapsulate MOSFET  

HL2300  

MOSFET (N-Channel)  

SOT-23  

FEATURES  

z

20V, 4A, R

DS(ON)

=55m

Ω

@V

GS

=4.5V.  

20V, 3.4A, R

DS(ON)

=70m

Ω

@V

GS

=2.5V.  

20V, 2.8A, R

DS(ON)

=90m

Ω

@V

GS

=1.8V.  

High dense cell design for extremely low R

DS(ON)  

1. GATE  

2. SOURCE  

3. DRAIN  

z

z

.

Exceptional on-resistance and maximum DC current capability  

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

Symbol  

V

DS  

V

GS  

I

D  

Parameter  

Value  

Units  

V

Drain-Source voltage  

20  

Gate-Source Voltage  

Drain Current  

±12  

4

V

A

I

DM  

Drain Current-Pulsed  

Power Dissipation  

10  

A

P

D  

0.25  

150  

-55-150  

500  

W

T

J  

Junction

T

e

mperature  

Storage

T

e

mperature  

Thermal Resistance, Junction-to-Ambient  

℃

T

stg  

R

θ

JA  

℃

℃

/W  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Units  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate Body Leakage Current, Forward  

Gate Body Leakage Current, Reverse  

On Characteristics  

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

=250µA  

V

DS

=20V, V

GS

=0  

20  

V

1

µA  

nA  

nA  

I

GSSF  

I

GSSR  

V

GS

= 12V, V

DS

= 0V  

V

GS

= -12V, V

DS

= 0V  

100  

-100  

Gate Threshold Voltage  

V

GS(th)  

R

DS(on)  

g

FS  

V

GS

= V

DS

, I

D

=250µA  

V

GS

=4.5V, I

D

=4A  

V

GS

=2.5V, I

D

=3.4A  

V

GS

=1.8V, I

D

=2.8A  

V

DS

=5V, I

D

=-3.6A  

0.4  

1

V

55  

70  

90  

m

Ω

 

m

Ω  

m

Ω  

S

Static Drain-Source On-Resistance  

Forward Transconductance  

Dynamic Characteristics  

Input Capacitance  

6

C

iss  

C

oss  

C

rss  

485  

85  

pF  

pF  

pF  

V

DS

=6, V

GS

= 0V,  

f = 1 MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics  

Turn-On Delay Time  

Turn-On Rise Time  

40  

t

d(on)  

t

r  

14  

18  

35  

16  

8

ns  

ns  

V

DD

=6V, I

D

=1A,  

V

GEN

=4.5V, R

G

=6

Ω

,  

R

L

=6

Ω  

Turn-Off Delay Time  

Turn-Off Fall Time  

t

d(off)  

t

f  

ns  

ns  

Total Gate Charge  

Q

g  

4.8  

1.0  

1.0  

nC  

nC  

nC  

V

DS

=6V, I

D

=2.8A,  

V

GS

=4.5V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

Drain-Source Diode Characteristics and Maximun Ratings  

Drain-Source Diode Forward Voltage

 

V

GS

= 0V, I

S

=1.6A  

V

SD  

1.2  

V

Typical characteristics