HL-Haolin-Elec-HP50N06-BAF
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July 2005
HP50N06
60V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche
Rugged Technology
Robust Gate Oxide Technology
Very Low
Intrinsic Capacitances
Excellent Switching
Characteristics
Unrivalled Gate Charge : 40
nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 0.023
Ω
(Typ.) @V
GS
=10V
100% Avalanche Tested
1.Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Value
Units
V
V
DSS
Drain-Source Voltage
Drain Current
60
50
I
D
– Continuous (T
C
= 25
℃)
– Continuous (T
C
= 100
℃)
A
Drain Current
35.4
200
±25
490
50
A
I
DM
V
GS
E
AS
I
AR
Drain Current
– Pulsed
(Note 1)
A
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
E
AR
dv/dt
P
D
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25
℃)
12
mJ
V/ns
7.0
120
0.8
W
W/
℃
℃
– Derate above 25℃
Operating and Storage Temperature Range
T
J
, T
STG
T
L
-55 to +175
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance
Characteristics
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
R
θ
CS
Junction-to-Case
Case-to-Sink
—
0.5
—
1.24
—
℃/W
Junction-to-Ambient
62.5
R
θ
JA
◎ SEMIHOW REV.A0,July 2005
Electrical Characteristics
T
C
=25
°
C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
V
GS
—
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
㎂
2.0
—
4.0
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 25 A
0.020 0.023
Ω
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
㎂
60
—
—
—
—
V
Δ
BV
DSS
Breakdown Voltage Temperature
I
D
= 250
㎂, Referenced to25℃
0.06
V/℃
/
Δ
T
J
Coefficient
I
DSS
V
DS
= 60 V, V
GS
= 0 V
—
—
—
—
1
㎂
㎂
Zero Gate Voltage Drain Current
V
DS
= 48 V, T
C
= 150
℃
10
I
GSSF
I
GSSR
Gate-Body Leakage Current,
Forward
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
—
—
—
—
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
-100
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
1600 2100
㎊
㎊
㎊
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
600
90
780
120
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Time
—
—
—
—
—
—
—
25
120
80
50
240
160
170
52
㎱
㎱
V
DS
= 30 V, I
D
= 25 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
R
G
= 25
Ω
㎱
(Note 4,5)
85
㎱
Q
g
Q
gs
Q
gd
40
nC
nC
nC
V
DS
= 48 V, I
D
= 50 A,
V
GS
= 10 V
10
—
(Note 4,5)
17
—
Source-Drain Diode Maximum Ratings and Characteristics
I
S
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
—
—
—
—
—
—
—
50
200
—
A
I
SM
SD
trr
S
GS
—
Reverse Recovery Time
I
S
= 50 A, V
GS
= 0 V
60
90
㎱
μ
C
di
F
/dt = 100 A/
μ
s
(Note 4)
Reverse Recovery Charge
—
Qrr
Notes ;
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
2. L=230uH,
I
AS
=50A, V
DD
=25V, R
G
=25
Ω
, Starting T
J
=25
°
C
3. I
SD
≤
50A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
°
C
4. Pulse
Test : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially
Independent of Operating Temperature
◎ SEMIHOW REV.A0,July 2005
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
and Temperature
12
10
8
3000
2500
2000
1500
1000
500
C
iss
=
C
gs
+
C
g
d
(C
d
s
= shorted)
C
o
ss
=
C
d
s
+
C
g
d
rss
= C
V
D
S
= 30V
V
D
S
= 48V
C
gd
C
iss
C
oss
6
※
N
ote ;
1. V
G
S
= 0 V
2. f = 1 MHz
4
C
rss
2
※
N
ote : I
D
=
5
0 A
0
10
0
-1
10
0
10
1
0
10
20
30
40
50
Q
G
, Total Gate Charge [nC]
V
D
S
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,July 2005
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
50
40
30
20
10
0
25
50
75
100
125
150
T
C
,
C
ase Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
1 0
0
D = 0 .5
0 .2
0 .1
※
N o te s
:
1 .
Z
θ
(
t)
=
1
.
2 4
℃
/
W M
a x.
2 .
D u ty
F a c to r,
D = t
1
/
t
2
3 .
T
J
M
T
C
P
D M
Z
θ
(
t)
JC
1 0
-1
–
=
*
JC
0 .0 5
P
DM
0 .0 2
0 .0 1
sin g le
p u lse
t
1
t
2
1 0
-2
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
ve P
u ls e
D u ra tio n
[se c]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,July 2005
Fig 12.
Gate Charge Test Circuit
& Waveform
V
GS
Same Type
50K
Ω
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13.
Resistive Switching Test Circuit
& Waveforms
R
L
V
DS
90%
V
DS
V
DD
( 0.5 rated V
DS
)
R
G
10%
V
in
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14.
Unclamped Inductive Switching Test Circuit
& Waveforms
BV
DSS
——————–
BV
DSS
— V
DD
L
1
2
2
—-
E
AS
=
L
L
I
AS
V
DS
V
DD
BV
DSS
I
AS
I
D
R
G
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
Time
◎ SEMIHOW REV.A0,July 2005
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
DUT
+
V
DS
_
I
S
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
S
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
◎ SEMIHOW REV.A0,July 2005
Package Dimension
TO-220 (A)
±0.20
±0.20
9.90
4.50
±0.20
1.30
±0.20
2.40
±0.20
1.27
±0.20
1.52
±0.20
0.80
2.54typ
2.54typ
±0.20
0.50
◎ SEMIHOW REV.A0,July 2005
TO-220 (B)
±0.20
±0.20
4.57
±0.20
1.27
±0.20
2.67
±0.20
1.27
±0.20
0.81
2.54typ
2.54typ
±0.20
0.40
◎ SEMIHOW REV.A0,July 2005
