HL-Haolin-Elec-HU4N65

Mar 2010  

BV

DSS

= 650

 

V  

R

HD4N65 / HU4N65  

650V N-Channel MOSFET  

I

D

= 4.0

 

A  

TO

–

252  

TO  

–

251  

2

FEATURES  

1

1

3

2

3

‰

Originative New Design  

HD5N65  

HU5N65  

‰

Superior Avalanche

 

Rugged Technology  

‰

Robust Gate Oxide Technology  

‰

Very Low

 

Intrinsic Capacitances  

‰

Excellent Switching

 

Characteristics  

‰

Unrivalled Gate Charge : 10.5

 

nC (Typ.)  

‰

Extended Safe Operating Area  

‰

Lower R

DS(ON)

: 2.3

 

ȍ

(Typ.) @V

GS

=10V  

‰

100% Avalanche Tested  

1.Gate 2.

 

Drain 3.

 

Source  

Absolute Maximum Ratings  

T

C

=25

୅

unless otherwise specified  

Symbol  

Parameter  

Value  

Units  

9

V

DSS  

Drain-Source Voltage  

Drain Current  

650  

4.0  

I

D  

– Continuous (T

C

= 25

ഒ

)  

– Continuous (T

C

= 100

ഒ

͚

 

$

Drain Current  

2.3  

$

I

DM  

V

GS  

E

AS  

I

AR  

Drain Current  

– Pulsed  

(Note 1)  

16.0  

ρ

30  

180  

4.0  

$

Gate-Source Voltage  

9

Single Pulsed Avalanche Energy  

Avalanche Current  

(Note 2)  

(Note 1)  

(Note 1)  

(Note 3)  

P-  

$

E

AR  

dv/dt  

P

D  

Repetitive Avalanche Energy  

Peak Diode Recovery dv/dt  

Power Dissipation

 

(T

A

= 25

ఁ

) *  

9.1  

P-  

9ꢀQV  

4.5  

2.5  

91  

:

:

:ꢀഒ  

ഒ

Power Dissipation (T

C

= 25

ଇ

)  

– Derate above 25

ଇ  

0.73  

T

J

, T

STG  

T

L  

Operating and Storage Temperature Range  

-55 to +150  

Maximum lead temperature for soldering purposes,  

1/8” from case for 5 seconds  

300  

ഒ

Thermal Resistance

 

Characteristics  

Symbol  

Parameter  

Typ.  

Max.  

Units  

R

ș

JC  

R

ș

JA  

Junction-to-Case  

—  

—  

—  

1.37  

Junction-to-Ambient*  

Junction-to-Ambient  

50  

ഒꢀ:  

110  

R

ș

JA  

* When

 

mounted on the minimum pad size recommended (PCB Mount)  

క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡  

Electrical Characteristics

T

C

=25

q

C unless otherwise specified  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max Units  

On Characteristics  

V

GS  

—  

Gate Threshold Voltage  

V

2.5  

—  

4.5  

2.9  

V

R

DS(ON)

Static Drain-Source  

On-Resistance  

V

GS

= 10 V, I

D

= 2.0 A  

2.3  

ש

Off Characteristics  

BV

DSS  

Drain-Source Breakdown Voltage

 

V

GS

= 0 V, I

D

= 250

Ꮃ  

650  

—  

—  

—  

—  

V

ԩ

BV

DSS

Breakdown Voltage Temperature  

I

D

= 250

Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ  

0.6  

·͠ఁ  

/

ԩ

T

J  

Coefficient  

I

DSS  

V

DS

= 650 V, V

GS

= 0 V  

—  

—  

—  

—  

1

Ꮃ

Ꮃ

Zero Gate Voltage Drain Current  

V

DS

= 520 V, T

C

= 125

ఁ  

10  

I

GSSF  

I

GSSR  

Gate-Body Leakage Current,  

Forward  

V

GS

= 30 V, V

DS

= 0 V  

V

GS

= -30 V, V

DS

= 0 V  

—  

—  

—  

—  

100  

Ꮂ

Ꮂ

Gate-Body Leakage Current,  

Reverse  

-100  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Input Capacitance  

—  

—  

—  

520  

60  

680  

80  

Ꮔ

Ꮔ

Ꮔ

V

DS

= 25 V, V

GS

= 0 V,  

f = 1.0 MHz  

Output Capacitance  

Reverse Transfer Capacitance  

8.0  

10.5  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-On Time  

—  

—  

—  

—  

—  

—  

—  

11  

45  

33  

90  

Ꭸ

Ꭸ

V

DS

= 325 V, I

D

= 4.2 A,  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

R

G

= 25

 

ש

 

40  

88  

Ꭸ

͙ͿΠΥΖ͚͑ͥͦ͝  

48  

100  

13.5  

—  

Ꭸ

Q

g  

Q

gs  

Q

gd  

10.5  

2.5  

4.0  

Οʹ  

Οʹ  

Οʹ  

V

DS

= 520V, I

D

= 4.2 A,  

V

GS

= 10 V  

͙ͿΠΥΖ͚͑ͥͦ͝  

—  

Source-Drain Diode Maximum Ratings and Characteristics  

I

S  

Continuous Source-Drain Diode Forward Current  

Pulsed Source-Drain Diode Forward Current  

—  

—  

—  

—  

—  

—  

—  

4.0  

16.0  

1.4  

—  

A

I

SM  

V

SD  

trr  

Source-Drain Diode Forward Voltage

 

I

S

= 4.0 A, V

GS

= 0 V  

—  

V

Reverse Recovery Time  

I

S

= 4.2 A, V

GS

= 0 V  

300  

2.2  

Ꭸ

ȝ

C  

di

F

/dt = 100 A/

ȝ

s

(Note 4)  

Reverse Recovery Charge  

—  

Qrr  

Notes ;  

1. Repetitive

 

Rating : Pulse width limited by maximum junction temperature  

2. L=18.9mH,

 

I

AS

=4.2A, V

DD

=50V, R

G

=25

:

, Starting T

J

=25

q

C  

3. I

SD

”

4.0A, di/dt

”

200A/

ȝ

s, V

DD

”

BV

DSS

, Starting T

J

=25

q

C  

4. Pulse

 

Test : Pulse Width

”

300

ȝ

s, Duty Cycle

”

2%  

5. Essentially

 

Independent of Operating Temperature  

క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡  

Typical Characteristics  

10

1  

10

0  

10

-1  

150

o

C  

25

o

C  

-55

o

C  

*

Note  

1. V

DS

= 50V  

2. 250

P

s Pulse Test  

2

4

6

8

10  

V

G

S

, Gate-Source Voltage

 

[V]  

V

DS

, Drain-Source Voltage [V]  

Figure 1. On Region Characteristics  

Figure 2. Transfer Characteristics  

6

5

4

3

2

1

0

10

1  

V

GS

= 10V  

10

0  

V

GS

= 20V  

150

o

C  

25

o

C  

*

Note :  

1. V

GS

= 0V  

Note : T

J

= 25

o

C  

2. 250

P

s Pulse Test  

*

-1  

10  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

0

2

4

6

8

10  

V

SD

, Source-Drain Voltage

 

[V]  

I

D

, Drain Current

 

[A]  

Figure 4. Body Diode Forward Voltage  

Variation with Source Current  

and Temperature  

Figure 3. On Resistance Variation vs  

Drain Current and Gate Voltage  

12  

10  

8

1000  

800  

600  

400  

200  

0

C

C

V

DS

= 130V  

V

DS

= 325V  

C

C

iss  

V

DS

= 520V  

6

C

oss  

4

*

Note ;  

1. V

GS

= 0 V  

2. f = 1 MHz  

C

rss  

2

* Note : I

D

= 4.2A  

0

0

2

4

6

8

10  

12  

10

-1  

10

0  

10

1  

Q

G

, Total Gate Charge [nC]  

V

D

S

, Drain-Source Voltage [V]  

Figure 5. Capacitance Characteristics  

Figure 6. Gate Charge Characteristics  

క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡  

Typical Characteristics

 

(continued)  

1.2  

1.1  

1.0  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

*

N

ote

 

:  

1. V

G

S

= 0 V  

0.9  

*

Note :  

2. I

D

=

2

50

P

A  

1. V

GS

= 10 V  

2. I

D

= 2.0 A  

0.8  

-100  

-100  

-50  

0

50  

100  

150  

200  

-50  

0

50  

100  

150  

200  

T

J

, Junction Temperature [

o

C]  

T

J

, Junction Temperature [

o

C

]  

Figure 8. On-Resistance Variation  

vs Temperature  

Figure 7. Breakdown Voltage Variation  

vs Temperature  

4

3

2

1

0

Operation in This Area  

is Limited by R

DS(on)  

10

P

s  

10

1  

10

0  

10

-1  

100

P

s  

1

m

s  

10 ms  

100 ms  

DC  

* Notes :  

1. T

C

= 25

o  

C

2. T

J

= 150

o  

C

3. Single Pulse  

10

0  

10

1  

10

2  

10

3  

25  

50  

75  

100  

125  

150  

V

DS

, Drain-Source Voltage [V]  

T

C

, Case Temperature [

o

C]  

Figure 9. Maximum Safe Operating Area  

Figure 10. Maximum Drain Current  

vs Case Temperature  

1 0

0  

D = 0 .5  

*

N o

t

e s  

1 .

 

T

J C

(

t)  

2 .

 

D u

t

y

 

F a c to r,

 

D = t

1

/

t

2  

:

Z

=

1

.

3 7

 

o

C

/

W

 

M a x.  

0

.

2  

0 .1  

3 .

 

T

J M  

– T

 

C

= P

 

D M

 

* Z

 

T

J

C

(

t)  

1 0

–

1  

0

.

0 5  

0

.

0 2  

P

DM  

0 .0 1  

s in g le

 

p u ls e  

t

1  

t

2  

1 0

–

2  

1 0

–

5  

1 0

–

4  

1 0

–

3  

1 0

–

2  

1 0

–

1  

1 0

0  

1 0

1  

t

1

, S

 

q u a

r

e

 

W a

 

ve P

 

u ls e

 

D u ra tio n

 

[s e c ]  

Figure 11. Transient Thermal Response Curve  

క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡  

Fig 12.

 

Gate Charge Test Circuit

 

& Waveform  

V

GS  

Same Type  

50K

ȍ

 

as DUT  

Q

g  

12V  

200nF  

10V  

300nF  

V

DS  

V

GS  

Q

gs  

Q

gd  

DUT  

3mA  

Charge  

Fig 13.

 

Resistive Switching Test Circuit

 

& Waveforms  

R

L  

V

DS  

90%  

V

DS  

V

DD  

( 0.5 rated V

DS  

)

R

G  

10%  

V

in  

DUT  

10V  

t

d(on)  

t

r  

t

d(off)  

t

f  

t

on  

t

off  

Fig 14.

 

Unclamped Inductive Switching Test Circuit

 

& Waveforms  

BV

DSS  

——————–  

BV

DSS

— V

DD  

L

1

2

2

—-  

E

AS  

=

L

L

I

AS  

V

DS  

V

DD  

BV

DSS  

I

AS  

I

D  

R

G  

I

D

(t)  

V

DD  

V

DS

(t)  

DUT  

10V  

t

p  

Time  

క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡  

Fig 15.

 

Peak Diode Recovery dv/dt Test Circuit

 

& Waveforms  

DUT  

+

V

DS  

_

I

S  

L

Driver  

R

G  

Same Type  

as DUT  

V

DD  

V

GS  

• dv/dt controlled by

 

R

G  

• I

S

controlled by pulse period  

Gate Pulse Width  

————————–  

V

GS  

D =  

Gate Pulse Period  

10V  

( Driver )  

I

FM

, Body Diode Forward Current  

I

S  

di/dt  

( DUT )  

I

RM  

Body Diode Reverse Current  

Body Diode Recovery dv/dt  

V

f  

V

DS  

( DUT )  

V

DD  

Body Diode  

Forward Voltage Drop  

క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡  

Package Dimension  

{vTYY  

±0.2  

6.6  

±0.1  

2.3  

±0.15  

5.35  

±0.05  

0.5  

±0.3  

1.2  

+0.1  

-0.05  

0.05  

±0.2  

±0.2  

0.8  

+0.1  

-0.05  

0.5  

0.6  

2.3typ  

2.3typ  

క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡  

Package Dimension  

{vTYX  

±0.2  

6.6  

±0.1  

2.3  

±0.15  

±0.05  

0.5  

5.35  

±0.15  

±0.15  

0.75  

0.8  

+0.1  

-0.05  

0.5  

±0.1  

0.6  

2.3typ  

2.3typ  

±0.3  

1.2  

క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡