HL-Haolin-Elec-M8050-D

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD  

TO-92 Plastic-Encapsulate Transistors  

TO-92  

M8050

TRANSISTOR (NPN)  

FEATURES  

1.EMITTER  

2.BASE  

z

Complimentary to S8550  

Collector current: I

C

=0.5A  

z

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

3.COLLECTOR  

Symbol  

Parameter  

Value  

Units  

1

2

3

V

CBO  

V

CEO  

V

EBO  

I

C  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

40  

V

V

25  

5

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

0.5  

A

P

C  

0.625  

150  

W

T

J  

℃

℃

T

stg  

Storage

T

e

mperature  

-55-150  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Parameter  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test  

conditions  

MIN  

40  

25  

5

TYP  

MAX  

UNIT  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

I

C

= 100

μ

A

, I

E

=0  

I

C

= 0.1mA,

 

I

B

=0  

I

E

= 100

μ

A, I

C

=0  

V

CB

= 40 V ,

 

I

E

=0  

V

CE

= 20 V ,

 

I

B

=0  

V

EB

= 5V,

 

I

C

=0  

V

V

0.1  

0.1  

0.1  

400  

μ

A  

μ

A  

μ

A  

Collector cut-off current  

I

CEO  

Emitter cut-off current  

I

EBO  

h

FE(1)  

V

CE

= 1V,

 

I

C

= 50mA  

V

CE

= 1V,

 

I

C

= 500mA  

I

C

=500mA, I

B

=50mA  

I

C

=500mA, I

B

=50mA  

85  

50  

DC current gain  

h

FE(2)  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE

(sat)  

V

BE

(sat)  

0.6  

1.2  

V

V

V

CE

= 6V, I

C

=20mA  

f =

30MHz  

Transition frequency  

f

T  

150  

MHz  

CLASSIFICATION OF

 

h

FE(1)  

Rank  

B

C

D

D3  

Range  

85-160  

120-200  

160-300  

300-400  

M8050