HL-Haolin-Elec-MMBT4403

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD  

SOT-23 Plastic-Encapsulate Transistors  

SOT-23  

MMBT4403

TRANSISTOR (PNP)  

FEATURES  

1.

BASE  

Switching transistor  

2.

EMITTER  

3.

COLLECTOR  

MARKING

：

MMBT4403=2T  

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Value  

Units  

-40  

V

-40  

V

-5  

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

-0.6  

0.3  

A

P

C  

W

℃

℃

T

j  

150  

T

stg  

Storage

T

e

mperature  

-55-150  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Parameter  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

Symbol  

Test  

conditions  

MIN  

-40  

-40  

-5  

MAX  

UNIT  

V

V

(BR)CBO

I

C

=-100

μ

A , I

E

=0  

V

(BR)CEO

I

C

= -1mA , I

B

=0  

V

(BR)EBO

I

E

=-100

μ

A, I

C

=0  

V

V

I

CBO  

I

CEO  

I

EBO  

V

CB

=-35

V

,

I

E

=0  

V

CE

=-35

V

,

I

B

=0  

V

EB

=-4

V

,

I

C

=0  

-0.1  

-0.1  

-0.1  

μ

A  

μ

A  

μ

A  

Collector cut-off current  

Emitter cut-off current  

h

FE  

DC current gain  

V

CE

=-2

V

,

I

C

= -150mA  

100  

200  

300  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE(sat)  

V

BE(sat)  

I

C

=-150mA, I

B

=-15mA  

I

C

=- 150mA, I

B

=-15mA  

-0.4  

V

V

-0.95  

V

CE

= -10

V

,

I

C

= -20mA  

f =

100MHz  

Transition frequency  

MHz  

f

T  

Typical Characteristics  

MMBT4403