HL-S100N75F
| Part # | HL-S100N75F |
Download  | HL-S100N75F |
N-Ch 100V Fast Switching MOSFETs
S
1
0
0
N
7
5F
Product Summary
Features
100V, 75A
BVDSS
RDSON
ID
R
DS(ON)
<13.5mΩ @ V
GS
= 4.5V
R
<9.2mΩ @ V
GS
= 10V
100V
7.3mΩ
75A
Advanced Split Gate Trench Technology
Excellent R
and Low Gate Charge
Lead free p
D
r
S
o
(
O
d
N
)
uct is acquired
PRPAK5X6 Pin Configuration
Description
Load Switch
PWM Application
Power management
Absolute Maximum Ratings
100
±20
75
49
300
V
V
V
DSS
GSS
Drain-Source Voltage
Gate-Source Voltage
V
T
C
= 25
℃
A
A
A
mJ
W
I
D
Continuous Drain Current
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T
C
= 100
℃
I
DM
EAS
P
90
97
D
T
C
= 25
℃
R
θ
JC
1.3
℃
/W
℃
-55 to 150
T
J
, T
STG
01
N-Ch 100V Fast Switching MOSFETs
S100N75F
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
U
n
its
Off Characteristic
100
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
V
GS
=0V, I
DS
=100V, V
GS
=0V,
DS
=0V, V
GS
= ±20V
D
=250
μ
A
–
–
–
–
1
V
μ
A
nA
I
I
–
–
±100
On Characteristics
1
–
–
1.6
7.3
9
2.5
9.2
V
GS(th)
DS(on)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
V
m
Ω
m
Ω
D
=20A
=8A
Static Drain-Source on-Resistance
R
note3
13.5
D
Dynamic Characteristics
2046
865
25
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=50V, V
GS
=0V,
C
oss
f=1.0MHz
C
rss
39.4
5.2
Q
Q
Q
g
V
DS
=50V, I =30A,
D
gs
gd
V
GS
=10V
9.8
Switching Characteristics
20
5.2
49
12
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
r
V
DD
=50V, I =25A,
G
D
t
d(o
f
f)
R =6
Ω
, V
GS
=10V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
M
a
x
i
mum Continuous Drain to Source Diode Forward Current
75
300
1
I
S
–
–
–
–
–
–
–
–
A
A
V
ns
nC
I
SM
SD
rr
Maximum Pulsed Drain to Source Diode Forward Current
V
Drain to Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
GS
=0V, I
=25
℃
,
I
F
=12A,dI/dt=100A/
μ
s
S
=30A
49
t
T
J
–
–
racteristics
85
Q
rr
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: T
J
=25℃, V
DD
=50V, V
G
=10V, R
G
=25Ω, L=0.5mH, IAS=19A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 100V Fast Switching MOSFETs
S100N75F
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6:Capacitance Characteristics
03
N-Ch 100V Fast Switching MOSFETs
S
1
0
0
N
7
5F
Typical Performance Characteristics
Figure 7:Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
Figure 9:Maximum Safe Operating Area
Figure 10: Maximum Continuous Drain Current
vs. Case Temperature
Figure 11 Maximum Effective
Transient Thermal Impedance, Junction-to-Case
04
N-Ch 100V Fast Switching MOSFETs
S100N75F
Test Circuit
05
N-Ch 100V Fast Switching MOSFETs
S100N75F
Package Mechanical Data- PDFN5x6-8L
06
