HL-S40N06D
| Part # | HL-S40N06D |
Download  | HL-S40N06D |
N-Ch 60V Fast Switching MOSFETs
S40N06D
Product Summary
Features
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
60V
RDSON
12m
Ω
ID
40A
100% EAS Guaranteed
Applications
PDFN3*3 Pin Configuration
The S40N06D
is the high cell density trenched
N-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The S40N06D
meet the RoHS and Green Product,
requirement 100%
EAS guaranteed with
full function reliability approved.
Absolute Maximum Ratings
Max.
Unit
V
DSS
GSS
Drain-Source Voltage
Gate-Source Voltage
60
±20
V
V
V
T
T
C
C
= 25
℃
= 100
℃
40
20
150
36
30
A
A
A
mJ
W
I
D
Continuous Drain Current
Pulsed Drain Current
note1
I
DM
E
Single Pulsed
A
v
a
lanche Energy
note2
AS
P
D
Power Dissipation
T
C
= 25
℃
R
θ
JC
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
2.5
-55 to +175
℃
/W
℃
T
J
, T
STG
01
N-Ch 60V Fast Switching MOSFETs
S40N06D
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
V
GS
=0V, I
DS
=60V, V
GS
=0V,
DS
=0V, V
GS
= ±20V
D
=250
μ
A
60
–
–
–
–
–
–
1
V
μ
A
nA
I
I
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
1
–
–
1.6
12
15
2.5
15
20
V
Static Drain-Source on-Resistance
D
=20A
=10A
R
DS(on)
m
Ω
note3
D
Dynamic Characteristics
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
930
230
8
22
4.5
3.5
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
C
oss
f=1.0MHz
C
rss
Q
Q
Q
g
V
DS
=30V, I =20A,
D
gs
V
GS
=10V
gd
Switching Characteristics
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
4.5
2.7
13.8
2.7
–
–
–
–
ns
ns
ns
ns
t
r
V
R
DD
=30V, I =20A,
D
t
d(o
f
f)
G
=1.6
Ω
, V
GS
=10V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward
Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
–
18
12
40
150
1.2
–
A
A
V
ns
nC
I
SM
SD
rr
rr
V
Drain to Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
T
J
GS
=0V, I
=25
℃
I
F
=20A,dI/dt=100A/
μ
s
S
=30A
t
,
Q
–
Note :
1.Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.EAS condition: T
J
=25℃, V
DD
=30V, VG=10V, RG=25Ω, L=0.5mH, IAS=12A
3.Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 60V Fast Switching MOSFETs
S40N06D
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Typical Output Characteristics
Figure 2:Transfer Characteristics
Figure 2 Transfer Characteristics
Curr
Figure 3:On-resistance vs. Drain Current
Figure 5:
Gate Charge Characteristics
Figure 4:
Body Diode Characteristics
Figure 6: Capacitance Characteristicsature
03
N-Ch 60V Fast Switching MOSFETs
S40N06D
Typical Performance Characteristics
Figure 7:
Normalized Breakdown Voltage vs. Junction
T
F
e
i
g
m
u
p
r
e
e
r
8
a
:
t
N
u
o
r
e
rmalized on Resistance vs. Junction
Fig
u
F
r
F
e
i
g
1u0
r
:
e
M
1
a
0
x:
i
m
M
a
u
x
m
i
m
C
u
o
m
n
t
i
C
n
o
u
n
o
t
u
i
n
s
u
Do
r
u
a
s
i
n
D
C
r
a
u
i
r
n
r
e
Curr
Figure 9: Maximum Safe Operating Area
Figure 11:Maximum Effective
ce
04
N-Ch 60V Fast Switching MOSFETs
S40N06D
PDFN3*3-8L Package Information
0
0
5
5
