HL-S4896D
| Part # | HL-S4896D |
Download  | HL-S4896D |
Dual N-Ch 40V Fast Switching MOSFETs
S4896D
Product Summary
Green Device Available
Super Low Gat
e
C
harge
BVDSS
RDSON
ID
Advanced Trench MOS Technology
40V
7.2mΩ
40A
100% EAS Guaranteed
Excellent CdV/dt effect decline
Description
PDFN3* 3 Pin Configuration
The S4896D
is the high cell density trenched
N-ch MOSFETs, which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
The S4896D
meet the RoHS and Green
Product requirement, 100% EAS guaranteed
with full
function reliability approved.
Absolute Maximum Ratings
Gate-Sou
r
ce Voltage
Continuous Drain Current,
V
GS
@ 10
V
1
Continuous Drain Current,
V
GS
@ 10
V
1
V
Drain-Source
V
o
ltage
40
±20
V
DS
V
V
GS
40
A
I
D
@T
C
=25
℃
20
A
I
D
@T
C
=100
℃
Pulsed Drain Current
2
180
A
I
DM
Single Pulse
A
v
a
lanche Energy
3
26.1
mJ
A
EAS
Av
a
lanche Current
15
I
AS
Total Power Dissipation
4
43.6
W
℃
℃
P
D
@T =25
℃
C
Storage Temperature Range
-55 to 150
-55 to 150
T
STG
Operating Junction Temperature Range
T
J
Thermal Data
Symbol
Parameter
Typ.
—
Max.
Units
℃
/W
℃
/W
R
θ
JA
Thermal Resistance Junction-ambient (Stead
y
S
tate)
1
62
R
θ
JC
Thermal Resistance Junction-Case
1
—
2.8
01
Dual N-Ch 40V Fast Switching MOSFETs
S4896D
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
40
—
—
7.2
10
Drain-Source Breakdown
V
o
ltage
V
GS
=0
V
, I
=
250uA
D
BV
DSS
—
9.5
15
3
V
V
GS
=10
V
, I
GS
=4.5
V
, I
GS
=V
DS
, I
D
=12A
R
DS(ON)
Static Drain-Source On-Resistance
Gate Threshold
V
o
ltage
2
m
Ω
V
V
D
=10A
—
V
D
=250uA
V
GS(th)
1.35
—
—
V
DS
=32
V
,
V
GS
=0
V
, T
DS
=32
V
,
V
GS
=0
V
, T
GS
=
±
20V ,
V
DS
=0V
DS
=0
V
,
V
GS
=0
V
,
f
=1MHz
J
=25
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
V
J
=55
℃
—
—
5
Gate-Source Leakage Current
Gate Resistance
V
I
GSS
—
—
±
100
—
—
—
—
—
—
—
—
—
—
—
nA
V
R
g
—
1.7
5.8
3
Ω
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
—
Q
gs
V
DS
=20
V
,
V
GS
=4.5
V
, I
D
=12A
—
nC
ns
Q
gd
—
1.2
14.3
5.6
20
T
d
(
o
n)
—
T
r
—
V
DD
=15
V
,
V
GS
=10
V
,
Turn-Off Delay Time
Fall Time
R
G
=3.3
Ω
I =1A
D
T
d
(
o
ff)
—
T
f
—
11
Input Capacitance
C
iss
—
690
193
38
Output Capacitance
Re
v
e
rse Transfer Capacitance
C
oss
V
DS
=15
V
,
V
GS
=0
V
,
f
=1MHz
—
pF
C
rss
—
Thermal Data
—
—
40
Continuous Source Current
1,5
V
G
=V
D
=0
V
,
F
orce Current
I
S
A
V
Diode Forward
V
o
ltage
2
V
GS
=0
V
, I
S
=1
A
, T
=
25
℃
J
V
SD
—
—
1
Note :
1
.
T
he data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
.
T
he data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3
.
T
he EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,IAS=31A
4
.
T
he power dissipation is limited by 150℃ junction temperature
5
.
T
he data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
02
Dual N-Ch 40V Fast Switching MOSFETs
S4896D
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: On-Resistance vs G-S Voltage
Figure 3:Source Drain Forward Characteristics
Figure 5: Normalized VGS(th) vs TJ
Figure 4: Gate-Charge Characteristics
Figure 6: Normalized RDSON vs TJ
03
Dual N-Ch 40V Fast Switching MOSFETs
S4896D
Typical Performance Characteristics
Figure 7: Capacitance
Figure 8: Safe Operating Area
Figure 9: Normalized Maximum Transient Thermal Impedance
Figure.10: Switching Time Waveform
Figure.11: Unclamped Inductive Switching Wave
04
Dual N-Ch 40V Fast Switching MOSFETs
S4896D
Dual PDFN3X 3 Package Outline Data
05
