HL-S8N10
| Part # | HL-S8N10 |
Download  | HL-S8N10 |
N-Ch 100V Fast Switching MOSFETs
S
8
N
1
0
Product Summary
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
100V
RDSON
110m
Ω
ID
6.5A
SOT89-3L Pin
Configuration
Description
The S8N10 is the high cell density trenched
N-ch MOSFETs, which provides excellent
RDSON and efficiency for most of the small
power switching and load switch applications.
The S8N10 meets the RoHS and Green
Product requirement with full function reliability
approved.
Absolute Maximum Ratings
100
V
DS
Drain-Source
V
o
ltage
Gate-Sou
r
ce Voltage
V
V
V
GS
±
20
Continuous Drain Current,
V
GS
@ 10
V
1
Continuous Drain Current,
V
GS
@ 10
V
1
I
D
@T
A
=25
℃
6.5
A
I
D
@T
A
=70
℃
3.2
12
A
I
DM
Pulsed Drain Current
2
A
P
D
@T
A
=25
℃
Total Power Dissipation
3
2
W
℃
℃
T
STG
Storage Temperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
01
N-Ch 100V Fast Switching MOSFETs
S8N10
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
Drain-Source Breakdown
V
o
ltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
–
V
V
(BR)DSS
DSS
GSS
V
GS
= 0
V
, I
DS
= 100
V
, V
GS
= 0V
V
DS
= 0
V
, V
GS
= ±20V
D
= 250
μ
A
100
–
110
–
μ
A
nA
I
V
1
±100
–
–
I
On Characteristics
note3
Gate Threshold
V
o
ltage
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
= 3A
1
–
1.95
115
3
140
Static Drain-Source On-Resistance
note2
m
Ω
R
DS(on)
V
GS
= 10
V
, I
D
Dynamic Characteristics
note4
Input Capacitance
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
C
iss
oss
rss
206
28.9
1.4
4.3
1.5
Output Capacitance
C
V
DS
= 50
V
, V
GS
= 0
V
, f =
1
.0
M
H
z
Re
v
e
rse Transfer Capacitance
Total Gate Charge
C
Q
g
Gate-Source Charge
Gate-Drain(“
M
i
ller”) Charge
Q
gs
V
DS
= 50
V
, I
=
3
A
, V
GS
= 10V
D
Q
gd
1.1
Switching Characteristics
note4
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
d
(
o
n)
14.7
3.5
20.9
2.7
t
r
V
DD
= 50
V
, I
DS
=3
A
R
G
= 2
Ω
,
V
GEN
= 10V
t
d
(
o
ff)
t
f
Drain-Source Diode Characteristics and Maximum Ratings
–
–
–
–
–
–
–
–
A
A
I
S
M
a
x
i
mum Continuous Drain to Source Diode Forward Current
note2
M
a
x
i
mum Pulsed Drain to Source Diode Forward Current
6.5
12
1.3
–
I
SM
SD
rr
rr
Drain to Source Diode Forward
V
o
ltage
note3
Body Diode Re
v
e
rse Reco
v
e
ry Time
–
V
V
V
GS
= 0
V
, I
S
=3A
ns
nC
A
t
32.1
39.4
2.1
Body Diode Re
v
e
rse Reco
v
e
ry Time Charge
–
–
Q
V
GS
= 0
V
, I
F
= 3
A
,
d
i/dt =100
A
/
μ
s
Characteristics
Peak Re
v
e
rse Reco
v
e
ry Current
I
rrm
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2%.
4. Guaranteed by design, not subject to production 5. V
DD
=50 V, R
G
=50 Ω, L=0.3 mH, starting Tj=25 °C
02
N-Ch 100V Fast Switching MOSFETs
S8N10
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:Forward Characteristics of Reverse
Figure 4:RDS(ON) vs. VGS
Figure 5: RDS(ON) vs. ID
Figure 6:Normalized RDS(on) vs. Temperature
03
N-Ch 100V Fast Switching MOSFETs
S
8
N
1
0
Typical Performance Characteristics
Figure 7: Capacitance Characteristics
Figure 8: Gate Charge Characteristics
04
N-Ch 100V Fast Switching MOSFETs
S8N10
SOT-89-3L Package Information
05
