HUAKE-SMF2N65

SMF2N65  

650V N-Channnel MOSFET  

●

Features

：

 

■

2.0A, 650V, R

DS(on)(Typ)

=4.2Ω@V

GS

=10V  

■

Low Gate Charge  

■

Low C

rss  

■

100% Avalanche Tested  

■

Fast Switching  

■

Improved dv/dt Capability  

●

Application:  

■

High Frequency Switching Mode Power Supply  

■

Active Power Factor Correction  

Absolute Maximum Ratings

(Tc=25



C unless otherwise noted)  

Symbol  

V

DSS  

Parameter  

Drain-Source Voltage  

Value  

650  

Unit  

V

2.0*  

1.3*  

8*  

A

Drain Current  

– Continuous(Tc=25



C)  

– Continuous(Tc=100



C)  

I

D  

A

I

DM  

V

GSS  

E

AS  

Drain Current  

-Pulsed  

(Note1)  

A

Gate-Source Voltage  

±

30  

120  

V

Single Pulsed Avalanche Energy  

Avalanche Current  

(Note2)  

(Note1)  

(Note1)  

(Note3)  

mJ  

A

I

AR  

2.0  

E

AR  

dv/dt  

Repetitive Avalanche Energy  

Peak Diode Recovery dv/dt  

4.4  

mJ  

V/ns  

W

4.5  

23  

Power Dissipation(T

C

=25



C

)  

P

D  

-Derate above 25°C  

0.18  

150  

W/



C  



C  



C  

Tj  

Operating Junction Temperature  

Storage Temperature Range  

Tstg  

-55 to+150  

*

Drain Current Limited by Maximum Junction Temperature.  

Thermal Characteristics  

Symbol  

R

θJC  

Parameter  

Max  

5.5  

Unit  

Thermal Resistance,Junction to Case  

Thermal Resistance,Junction to Ambient  



C /W  



C /W  

R

θJA  

62.5  

HUAKE semiconductors  

2017.08  

1/5  

编号：

HK-WI-TD-005

版本

/

版次：

B/0  

SMF2N65  

650V N-Channnel MOSFET  

Electrical Characteristics

(Tc=25



C unless otherwise noted)  

Symbol  

Parameter  

Test Conditons  

Min Typ Max Unit  

Off Characteristics  

Drain-source Breakdown Voltage

 

V

GS

=0V ,I

D

=250μA  

BV

DSS  

650  

—  

—  

—  

—  

V

△

BV

DSS  

/

△

T

J  

I

D

=250μA  

Breakdown Voltage Temperature  

Coefficient  

0.65  

V/



C  

(Referenced to 25



C)  

V

DS

=650V,V

GS

=0V  

V

DS

=520V,Tc=125



C  

V

GS

=+30V, V

DS

=0V  

V

GS

=-30V, V

DS

=0V  

—  

—  

—  

—  

—  

—  

—  

—  

1

μA  

μA  

Zero Gate Voltage Drain Current  

I

DSS  

10  

Gate-Body Leakage Current,Forward  

Gate-Body Leakage Current,Reverse  

I

GSSF  

I

GSSR  

100 nA  

-100  

nA  

On Characteristics  

Gate Threshold Voltage  

V

DS

= V

GS

, I

D

=250μA  

V

GS

=10 V, I

D

=1.0A  

V

GS(th)  

R

DS(on)  

2.0  

—  

—  

4.0  

4.9  

V

Static Drain-Source On-Resistance  

Forward Transconductance  

4.2  

Ω

V

DS

=40 V, I

D

=1.0A  

(Note4)  

g

FS  

—  

1.9  

—  

S

Dynamic Characteristics  

Input Capacitance  

C

iss  

C

oss  

C

rss  

—  

—  

—  

270  

40  

5

—  

—  

—  

pF  

pF  

pF  

V

DS

=25V,V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics  

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

t

d(on)  

t

r  

t

d(off)  

t

f  

—  

—  

—  

—  

—  

—  

—  

7

23  

2

—  

—  

—  

—  

—  

—  

—  

ns  

ns  

V

DD

= 325 V, I

D

= 2.0 A,  

R

G

= 25 Ω  

(Note4,5)  

ns  

24  

9

ns  

Q

g  

Q

gs  

Q

gd  

nC  

nC  

nC  

V

DS

= 520 V, I

D

=2.0 A,  

V

GS

= 10 V

 

(Note4,5)  

1.6  

4.3  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain-Source Diode Forward Current  

Maximum Pulsed Drain-Source Diode Forward Current  

I

S  

I

SM  

V

SD  

t

rr  

—  

—  

—  

—  

—  

—  

—  

2.0  

8

A

A

Drain-Source Diode Forward Voltage  

Reverse Recovery Time  

V

GS

=0V,I

S

=2.0A  

—  

1.4  

—  

V

230  

1.0  

ns  

μC  

V

GS

=0V, I

S

=2.0A,  

d I

F

/dt=100A/μs

(Note4)  

Reverse Recovery Charge  

Q

rr  

—  

Notes:  

1

、

Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature.  

2

、

L = 56.0mH, I

AS

=2.0A, V

DD

= 50V, R

G

= 25 Ω, Starting T

J

= 25



C.  

3

、

I

SD

≤2.0A, di/dt≤200A/μs, V

DD

≤BV

DSS,

Starting T

J

= 25



C.  

4

、

Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%.  

5

、

Essentially Independent of Operating Temperature.  

HUAKE semiconductors  

2017.08  

2/5  

编号：

HK-WI-TD-005

版本

/

版次：

B/0  

SMF2N65  

650V N-Channnel MOSFET  

On-Regin Characteristics  

Transfer Characteristics  

On-Resistance Variation vs.  

Drain Current and Gate Voltage  

Body Diode Forward Voltage Variation  

vs. Source Current and Temperature  

Capacitance Characteristics  

Gate Charge Characteristics  

HUAKE semiconductors  

2017.08  

3/5  

编号：

HK-WI-TD-005

版本

/

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B/0  

SMF2N65  

650V N-Channnel MOSFET  

Breakdown Voltage Variation  

vs. Temperature  

On-Resistance Variation  

vs. Temperature  

Maximum Drain Current  

Vs. Case Temperature  

Maximum Safe Operating Area  

HUAKE semiconductors  

2017.08  

4/5  

编号：

HK-WI-TD-005

版本

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版次：

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SMF2N65  

650V N-Channnel MOSFET  

TO-220F Package Dimensions  

UNIT

：

mm  

SYMBOL  

A

min  

9.80  

nom  

7.00  

max  

10.60  

SYMBOL  

min  

nom  

2.54  

max  

D

D1  

D2  

D3  

E

E1  

E2  

E3  

E4  

A1  

A2  

A3  

B1  

B2  

B3  

C

C1  

1.15  

0.60  

0.20  

2.24  

1.55  

1.00  

0.50  

2.84  

2.90  

9.10  

15.40  

4.35  

6.00  

3.00  

15.00  

8.80  

3.40  

9.90  

16.40  

4.95  

7.40  

3.70  

0.70  

1.0

×

45

°  

0.35  

2.30  

0.65  

3.30  

17.00  

10.80  

C2  

α

（度）  

30

°  

HUAKE semiconductors  

2017.08  

5/5  

编号：

HK-WI-TD-005

版本

/

版次：

B/0