HUAKE-SMT12N60

SMT12N60  

600V N-Channnel MOSFET  

●

Features

：

 

■

12.0A, 600V, R

DS(on)(Typ)

=0.63Ω@V

GS

=10V  

■

Low Gate Charge  

■

Low C

rss  

■

100% Avalanche Tested  

■

Fast Switching  

■

Improved dv/dt Capability  

●

Application:  

■

High Frequency Switching Mode Power Supply  

■

Active Power Factor Correction  

Absolute Maximum Ratings

(Tc=25



C unless otherwise noted)  

Symbol  

V

DSS  

Parameter  

Drain-Source Voltage  

Value  

600  

Unit  

V

12.0*  

7.4*  

A

Drain Current  

– Continuous(Tc=25



C)  

– Continuous(Tc=100



C)  

I

D  

A

I

DM  

V

GSS  

E

AS  

Drain Current  

-Pulsed  

(Note1)  

48*  

A

Gate-Source Voltage  

±

30  

880  

V

Single Pulsed Avalanche Energy  

Avalanche Current  

(Note2)  

(Note1)  

(Note1)  

(Note3)  

mJ  

A

I

AR  

12.0  

25  

E

AR  

dv/dt  

Repetitive Avalanche Energy  

Peak Diode Recovery dv/dt  

mJ  

V/ns  

W

4.5  

145  

Power Dissipation(T

C

=25



C

)  

P

D  

-Derate above 25°C  

1.16  

150  

W/



C  



C  



C  

Tj  

Operating Junction Temperature  

Storage Temperature Range  

Tstg  

-55 to+150  

*

Drain Current Limited by Maximum Junction Temperature.  

Thermal Characteristics  

Symbol  

R

θJC  

Parameter  

Max  

0.86  

62.5  

Unit  

Thermal Resistance,Junction to Case  

Thermal Resistance,Junction to Ambient  



C /W  



C /W  

R

θJA  

HUAKE semiconductors  

2017.08  

1/5  

编号：

HK-WI-TD-005

版本

/

版次：

B/0  

SMT12N60  

600V N-Channnel MOSFET  

Electrical Characteristics

(Tc=25



C unless otherwise noted)  

Symbol  

Parameter  

Test Conditons  

Min Typ Max Unit  

Off Characteristics  

Drain-source Breakdown Voltage

 

V

GS

=0V ,I

D

=250μA  

BV

DSS  

600  

—  

—  

—  

—  

V

△

BV

DSS  

/

△

T

J  

I

D

=250μA  

Breakdown Voltage Temperature  

Coefficient  

0.7  

V/



C  

(Referenced to 25



C)  

V

DS

=600V,V

GS

=0V  

V

DS

=480V,Tc=125



C  

V

GS

=+30V, V

DS

=0V  

V

GS

=-30V, V

DS

=0V  

—  

—  

—  

—  

—  

—  

—  

—  

1

μA  

μA  

Zero Gate Voltage Drain Current  

I

DSS  

10  

Gate-Body Leakage Current,Forward  

Gate-Body Leakage Current,Reverse  

I

GSSF  

I

GSSR  

100 nA  

-100  

nA  

On Characteristics  

Gate Threshold Voltage  

V

DS

= V

GS

, I

D

=250μA  

V

GS

=10 V, I

D

=6.0A  

V

GS(th)  

R

DS(on)  

2.0  

—  

—  

4.0  

V

Static Drain-Source On-Resistance  

Forward Transconductance  

0.63 0.80  

Ω

V

DS

=40 V, I

D

=6.0A  

(Note4)  

g

FS  

—  

7.8  

—  

S

Dynamic Characteristics  

1760  

182  

21  

Input Capacitance  

C

iss  

C

oss  

C

rss  

—  

—  

—  

—  

—  

—  

pF  

pF  

pF  

V

DS

=25V,V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics  

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

t

d(on)  

t

r  

t

d(off)  

t

f  

—  

—  

—  

—  

—  

—  

—  

30  

85  

—  

—  

—  

—  

—  

—  

—  

ns  

ns  

V

DD

= 300 V, I

D

= 12 A,  

R

G

= 25 Ω  

(Note4,5)  

140  

90  

ns  

ns  

Q

g  

Q

gs  

Q

gd  

48  

nC  

nC  

nC  

V

DS

= 480 V, I

D

=12 A,  

V

GS

= 10 V

 

(Note4,5)  

8.5  

21  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain-Source Diode Forward Current  

Maximum Pulsed Drain-Source Diode Forward Current  

I

S  

I

SM  

V

SD  

t

rr  

—  

—  

—  

—  

—  

—  

—  

12  

48  

1.3  

—  

A

A

Drain-Source Diode Forward Voltage  

Reverse Recovery Time  

V

GS

=0V,I

S

=12.0A  

—  

V

425  

4.31  

ns  

μC  

V

GS

=0V, I

S

=12.0A,  

d I

F

/dt=100A/μs

(Note4)  

Reverse Recovery Charge  

Q

rr  

—  

Notes:  

1

、

Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature.  

2

、

L = 11mH, I

AS

=12.0A, V

DD

= 50V, R

G

= 25 Ω, Starting T

J

= 25



C.  

3

、

I

SD

≤12.0A, di/dt≤200A/μs, V

DD

≤BV

DSS,

Starting T

J

= 25



C.  

4

、

Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%.  

5

、

Essentially Independent of Operating Temperature.  

HUAKE semiconductors  

2017.08  

2/5  

编号：

HK-WI-TD-005

版本

/

版次：

B/0  

SMT12N60  

600V N-Channnel MOSFET  

On-Regin Characteristics  

Transfer Characteristics  

On-Resistance Variation vs.  

Drain Current and Gate Voltage  

Body Diode Forward Voltage Variation  

vs. Source Current and Temperature  

Capacitance Characteristics  

Gate Charge Characteristics  

HUAKE semiconductors  

2017.08  

3/5  

编号：

HK-WI-TD-005

版本

/

版次：

B/0  

SMT12N60  

600V N-Channnel MOSFET  

Breakdown Voltage Variation  

vs. Temperature  

On-Resistance Variation  

vs. Temperature  

Maximum Drain Current  

Vs. Case Temperature  

Maximum Safe Operating Area  

HUAKE semiconductors  

2017.08  

4/5  

编号：

HK-WI-TD-005

版本

/

版次：

B/0  

SMT12N60  

600V N-Channnel MOSFET  

TO-220 MECHANICAL DATA  

UNIT

：

mm  

max  

SYMBOL  

min  

4.00  

1.25  

0.55  

0.65  

0.40  

14.80  

6.00  

nom  

max  

4.80  

1.55  

1.05  

0.95  

0.60  

16.80  

7.00  

SYMBOL  

min  

9.50  

nom  

2.54  

A

B

B1  

b1  

c

E

e

F

L

L1  

Q

10.50  

1.15  

12.00  

2.50  

2.50  

1.80  

3.40  

1.45  

14.00  

3.50  

3.50  

2.80  

3.90  

3.00  

D

D1  

Q1  

φ

P  

HUAKE semiconductors  

2017.08  

5/5  

编号：

HK-WI-TD-005

版本

/

版次：

B/0