HUASHUO-FDN338P

FDN338P  

P-Ch 20V Fast Switching MOSFETs  

Product Summary  

Description  

The FDN338P is the high cell density trenched P-  

ch MOSFE

T

s

, which provides excellent RDSON  

and efficiency for most of the small power switching  

and load switch applications.  

V

DS  

-20  

89  

-3  

V

R

DS(ON),typ  

m

Ω  

A

I

D  

The FDN338P meet the RoHS and Green Product  

requirement with full function reliability approved.  

⚫

Green Device Available  

⚫

Super Low Gate Charge  

⚫

Excellent Cdv/dt effect decline  

⚫

Advanced high cell density Trench  

technology  

SOT23 Pin Configuration  

Absolute Maximum Ratings  

Symbol  

V

DS  

Parameter  

Rating  

-20  

Units  

V

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

V

GS  

±

12  

V

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

I

DM  

Continuous Drain Current, V

GS

@ -4.5V

1  

Continuous Drain Current, V

GS

@ -4.5V

1  

Pulsed Drain Current

2  

-3  

-2.4  

A

A

-12  

A

P

D

@T

A

=25

℃  

T

STG  

Total Power Dissipation

3  

1

W

℃

℃

Storage

T

e

mperature Range  

-55 to 150  

-55 to 150  

T

J  

Operating Junction Temperature Range  

Thermal Data  

Symbol  

R

θ

JA  

Parameter  

Typ.  

—  

Max.  

125  

80  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient

1  

Thermal Resistance Junction-Case

1  

R

θ

JC  

—  

1

V

e

r 2.0  

FDN338P  

P-Ch 20V Fast Switching MOSFETs  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=-250uA  

Min.  

-20  

—  

Typ.  

—  

Max.  

—  

Unit  

BV

DSS  

Drain-Source Breakdown Voltage  

V

V

GS

=-4.5V , I

D

=-3A  

89  

100  

140  

-1.0  

-1  

R

DS(ON)  

Static Drain-Source On-Resistance

2  

Gate Threshold Voltage  

m



 

V

V

GS

=-2.5V , I

D

=-2A  

—  

130  

-0.5  

—  

V

GS(th)  

I

DSS  

V

GS

=V

DS

, I

D

=-250uA  

V

DS

=-16V , V

GS

=0V , T

J

=25

℃  

V

DS

=-16V , V

GS

=0V , T

J

=55

℃  

V

GS

=

±

12V , V

DS

=0V  

-0.3  

—  

Drain-Source Leakage Current  

uA  

—  

—  

-5  

I

GSS  

gfs  

Gate-Source Leakage Current  

Forward Transconductance  

Total Gate Charge (-4.5V)  

Gate-Source Charge  

Gate-Drain Charge  

—  

—  

±

100  

—  

nA  

S

V

DS

=-5V , I

D

=-3A  

—  

12.2  

10.1  

1.21  

2.46  

5.6  

Q

g  

—  

—  

V

DS

=-15V , V

GS

=-4.5V , I

D

=-3A  

nC  

Q

gs  

Q

gd  

T

d(on)  

T

r  

—  

—  

—  

—  

Turn-On Delay Time  

Rise Time  

—  

—  

V

DD

=-10V , V

GS

=-4.5V , R

G

=3.3

  

—  

32.2  

45.6  

29.2  

677  

82  

—  

ns  

I

D

=-3A  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

—  

—  

—  

—  

C

iss  

C

oss  

C

rss  

Input Capacitance  

—  

—  

V

DS

=-15V , V

GS

=0V , f=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

—  

—  

—  

73  

—  

Diode Characteristics  

Symbol  

Parameter  

Conditions  

V

G

=V

D

=0V , Force Current  

V

GS

=0V , I

S

=-1A , T

J

=25

℃  

Min.  

—  

Typ.  

—  

Max.  

-3  

Unit  

A

I

S  

Continuous Source Current

1,4  

Diode Forward Voltage

2  

V

SD  

—  

—  

-1  

V

Note :  

1.The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%  

3.The power dissipation is limited by 150

℃

junction temperature  

4.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

2

V

e

r 2.0  

FDN338P  

P-Ch 20V Fast Switching MOSFETs  

Typical Characteristics  

12  

V

V

GS

=-4.5V  

V

GS

=-3V  

10  

8

V

GS

=-2.5V  

6

V

GS

=-1.8V  

4

2

0

0

0.5  

1

1.5  

2

-V

DS

, Drain-to-Source Voltage (V)  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance vs. G-S Voltage  

10  

8

6

T

J

=150

℃

 

T

J

=25

℃  

4

2

0

0

0.4  

0.8  

1.2  

-V

SD

, Source-to-Drain Voltage (V)  

Fig.3 Source Drain Forward Characteristics  

Fig.4 Gate-Charge Characteristics  

1.8  

1.8  

1.4  

1.0  

0.6  

0.2  

1.4  

1

0.6  

0.2  

-50  

0

50  

100  

150  

-50  

0

50  

100  

150  

T

J

,Junction Temperature (

℃

)  

T

J

, Junction Temperature (

℃

)  

Fig.5 Normalized V

GS(th)

vs. T

J  

Fig.6 Normalized R

DSON

vs. T

J  

3

V

e

r 2.0  

FDN338P  

P-Ch 20V Fast Switching MOSFETs  

1000  

100  

10  

100.00  

10.00  

1.00  

Ciss  

100us  

10ms  

Coss  

Crss  

100ms  

1s  

0.10  

T

A

=25

℃

 

DC  

F=1.0MHz  

Single Pulse  

0.01  

1

5

9

13  

17  

21  

0.1  

1

10  

100  

-V

DS

, Drain to Source Voltage (V)  

-V

DS

(V)  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

DUTY=0.5  

0.2  

0.1  

0.1  

0.05  

0.02  

0.01  

0.01  

P

DM  

T

ON  

0.001 SINGLE

 

PULSE  

T

D = T

ON

/T  

T

Jpeak

= T

A

+

P

D

M

x R

θJA  

0.0001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Fig.10 Switching Time Waveform  

Fig.11 Gate Charge Waveform  

4

V

e

r 2.0  

FDN338P  

P-Ch 20V Fast Switching MOSFETs  

Ordering Information  

Part Number  

Package code  

Packaging  

FDN338P  

SO

T

-23  

3000/Tape&Reel  

5

V

e

r 2.0