HUASHUO-HSBA0056
| Part # | HUASHUO-HSBA0056 |
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HSBA0056
N-Ch 100V Fast Switching MOSFETs
Product Summary
Applications
Portable Equipment.
V
DS
100
20
V
Battery Powered Systems.
Hard Switching and High-Speed Circuit.
R
DS(ON),Max
I
D
m
Ω
A
32
⚫
100% EAS Guaranteed
⚫
Low R
DS(ON)
PRPAK5X6 Pin Configuration
⚫
Low Gate Charge
⚫
RoHs and Halogen-Free Compliant
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current
1,6
Continuous Drain Current
1,6
Pulsed Drain Current
2
100
±
20
32
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
A
20
A
90
A
EAS
Single Pulse Avalanche Energy
3
45
mJ
A
I
AS
Avalanche Current
30
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
Storage
T
e
mperature Range
37.9
-55 to 150
W
℃
℃
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-Ambient
1
(t
≦
10s)
—
25
55
℃
/W
℃
/W
℃
/W
R
θ
JA
R
θ
JC
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
—
3.3
1
V
e
r 2.0
HSBA0056
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
V
GS
=10V , I
D
=10A
15.5
21
20
30
2.2
1
R
DS(ON)
V
GS(th)
I
DSS
m
V
V
GS
=4.5V , I
D
=10A
—
V
GS
=V
DS
, I
D
=250uA
1.2
—
1.8
—
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
Rg
Gate-Source Leakage Current
Gate Resistance
—
—
±
100
—
nA
V
DS
=0V , V
GS
=0V,f=1MHz
—
1
Qg
T
o
tal Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
17.9
2.8
5.2
13
—
V
DS
=50V , V
GS
=10V , I
D
=10A
nC
ns
Qgs
Qgd
Td(on)
Tr
—
—
—
—
—
—
V
DD
=30V , V
GS
=10V , R
G
=6
,
—
6
—
I
D
=1A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
—
30
—
—
29
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
849
185
8
—
V
DS
=50V , V
GS
=0V , f=1MHz
pF
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
32
Unit
A
I
S
Continuous Source Current
1,5,6
Diode Forward Voltage
2
V
SD
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=30A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
6.The maximum current rating is package limited.
2
V
e
r 2.0
HSBA0056
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.1 Typical Output Characteristics
Fig.3 Source-Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
3
V
e
r 2.0
HSBA0056
N-Ch 100V Fast Switching MOSFETs
Fig.8 Safe Operating Area
Fig.7 Capacitance
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
L x I
AS
2
x
V
DS
90%
BV
DSS
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
4
V
e
r 2.0
HSBA0056
N-Ch 100V Fast Switching MOSFETs
PRPAK5X6 Package Outline Dimensions
5
V
e
r 2.0
