HUASHUO-HSBA060N10
| Part # | HUASHUO-HSBA060N10 |
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HSBA060N10
N-Ch 100V Fast Switching MOSFETs
Product Summary
Description
The HSBA060N10 is the high cell density trenched
N-ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most of the Synchronous
Rectification for AC/DC Quick Charger.
V
DS
100
4.6
86
V
R
DS(ON),TYP
m
Ω
A
I
D
PRPAK5X6 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Low R
DS(ON)
⚫
Low Gate Charge
⚫
RoHs and Halogen-Free Compliant
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
100
±
20
86
V
V
I
D
@T
C
=25
℃
I
D
@T
C
=70
℃
I
DM
Continuous Drain Current
1,6
Continuous Drain Current
1,6
Pulsed Drain Current
2
A
55
A
145
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
16
mJ
A
I
AS
18
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
Storage
T
e
mperature Range
89
W
℃
℃
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
—
Thermal Resistance Junction-Ambient
1
(t
≦
10s)
23
50
℃
/W
℃
/W
℃
/W
R
θ
JA
R
θ
JC
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
—
1.4
1
V
e
r 2.0
HSBA060N10
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
1
Typ.
—
Max.
—
6
Unit
BV
DSS
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
V
GS
=10V , I
D
=20A
4.6
6.6
2
R
DS(ON)
m
V
V
GS
=4.5V , I
D
=20A
8.6
3
V
GS(th)
I
DSS
V
GS
=V
DS
, I
D
=250uA
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
—
—
—
—
—
—
—
—
—
—
—
nA
S
V
DS
=5V , I
D
=20A
3.1
1.7
60
Rg
Vgs=0V, Vds=0V,f=1MHz
Qg
T
o
tal Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=50V , V
GS
=10V , I
D
=20A
nC
ns
Qgs
Qgd
Td(on)
Tr
8
15
11
V
DD
=50V , V
GS
=10V , R
G
=3
,
20
I
D
=1A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
45
23
Ciss
Coss
Crss
Input Capacitance
3010
539
20
V
DS
=50V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
I
F
=20A , di/dt=100A/µs ,
T
J
=25
℃
Min.
—
Typ.
—
Max.
86
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,5,6
Diode Forward Voltage
2
—
—
1.1
—
V
Reverse Recovery Time
Reverse Recovery Charge
—
55
nS
nC
Q
rr
—
108
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=18A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
6.The maximum current rating is package limited.
2
V
e
r 2.0
HSBA060N10
N-Ch 100V Fast Switching MOSFETs
PRPAK5X6 Package Outline Dimensions
6
V
e
r 2.0
