HUASHUO-HSBA100P04
| Part # | HUASHUO-HSBA100P04 |
Download  | HUASHUO-HSBA100P04 |
HSBA100P04
P-Ch 40V Fast Switching MOSFETs
Description
Product Summary
The HSBA100P04 is the high cell density
trenched P-ch MOSFE
T
s
, which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
The HSBA100P04 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
V
DS
-40
5.8
V
R
DS(ON),max
I
D
m
Ω
-100 A
PRPAK5*6 Pin Configuration
⚫
Super Low Gate Charge
100% EAS Guaranteed
Excellent CdV/dt effect decline
Green Device Available
Advanced high cell density Trench
technology
⚫
⚫
⚫
⚫
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-40
Units
Drain-Source Voltage
V
V
V
GS
±
20
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-100
-64
A
I
D
@T
C
=100
℃
A
I
DM
-295
A
EAS
Single Pulse Avalanche Energy
3
380
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
Avalanche Current
-50
Total Power Dissipation
4
52.1
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
25
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1.8
1
V
e
r 2.0
HSBA100P04
P-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-40
—
—
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
J
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-20A
-0.023
4.6
6
—
V/
℃
5.8
9.1
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-10A
V
GS(th)
Gate Threshold Voltage
-1.8
4.74
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=-15V , I
D
=-18A
50
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
7
14
—
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
115
24
V
DS
=-20V , V
GS
=-10V , I
D
=-12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
26
—
19
—
V
DD
=-20V , V
GS
=-10V , R
G
=3
,
12
—
I
D
=-12A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
80
—
18
—
C
iss
C
oss
C
rss
Input Capacitance
7090
930
722
—
V
DS
=-20V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-100
-1.2
Unit
A
I
S
Continuous Source Current
1,5
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-32V,V
GS
=-10V,L=0.1mH,I
AS
=-50A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBA100P04
P-Ch 40V Fast Switching MOSFETs
PRPAK5X6 Package Outline Dimensions
5
V
e
r 2.0
