HUASHUO-HSBA3016
| Part # | HUASHUO-HSBA3016 |
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HSBA3016
N-Ch 30V Fast Switching MOSFETs
Product Summary
Description
V
DS
30
4
V
The HSBA3016 is the high cell density trenched N-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
R
DS(ON),max
m
Ω
A
I
D
108
The HSBA3016 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
30
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
±
20
108
68
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1,6
Continuous Drain Current, V
GS
@ 10V
1,6
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
A
27.3
21.8
17.3
14
A
A
216
144.7
53.8
69
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
mJ
A
I
AS
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
W
W
℃
℃
Total Power Dissipation
4
5
2
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 175
T
J
-55 to 175
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
62
25
R
θ
JA
—
R
θ
JC
—
1.8
1
V
e
r 2.0
HSBA3016
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
—
4
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=30A
0.0213
—
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=15A
—
6
V
GS(th)
Gate Threshold Voltage
—
2.5
—
1
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-5.73
—
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
—
—
—
—
—
—
—
—
—
—
—
nA
S
V
DS
=5V , I
D
=30A
26.5
1.4
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
31.6
8.6
V
DS
=15V , V
GS
=4.5V , I
D
=15A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
11.7
9
V
DD
=15V , V
GS
=10V , R
G
=3.3
19
I
D
=15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
58
15.2
3075
400
315
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
108
216
1
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=53.8A
4.The power dissipation is limited by 175
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
6.Package limitation current is 85A.
2
V
e
r 2.0
HSBA3016
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
210
5.0
4.5
4.0
3.5
3.0
I
D
=12A
180
150
120
90
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
60
30
0
0
0.3
0.6
0.9
1.2
1.5
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
10
12
10
8
I
D
=15A
8
6
4
2
0
6
T
J
=175
℃
T
J
=25
℃
4
2
0
0
20
40
60
80
0
0.3
0.6
0.9
1.2
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
2.0
1.5
1.5
1.0
0.5
1
0.5
0
-50
25
100
175
-50
25
100
175
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSBA3016
N-Ch 30V Fast Switching MOSFETs
1000.00
100.00
10.00
1.00
10000
1000
100
F=1.0MHz
Ciss
10us
100us
Coss
Crss
10ms
100ms
DC
0.10
T
C
=25
℃
Single Pulse
0.01
10
0.1
1
10
100
1
5
9
13
17
21
25
V
DS
Drain to Source Voltage(V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
P
DM
T
ON
T
0.02
0.01
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
S
I
NGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
V
e
r 2.0
HSBA3016
N-Ch 30V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSBA3016
PR
P
A
K5*6
3000/Tape&Reel
5
V
e
r 2.0
