HUASHUO-HSBA3031

HSBA3031  

P-Ch 30V Fast Switching MOSFETs  

Description  

Product Summary  

V

DS  

-30  

7.2  

-70  

V

The HSBA3031 is the high cell density trenched P-  

ch MOSFE

T

s

, which provide excellent RDSON and  

gate charge for most of the synchronous buck  

converter applications.  

R

DS(ON),max  

m

Ω  

A

I

D  

The HSBA3031 meet the RoHS and Green Product  

requirement, 100% EAS guaranteed with full  

function reliability approved.  

PRPAK5X6 Pin Configuration  

⚫

⚫

⚫

⚫

⚫

Super Low Gate Charge  

100% EAS Guaranteed  

Green Device Available  

Excellent CdV/dt effect decline  

Advanced high cell density Trench  

technology  

Absolute Maximum Ratings  

Symbol  

V

DS  

Parameter  

Rating  

-30  

Units  

V

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

V

GS  

±

20  

-70  

V

I

D

@T

C

=25

℃  

Continuous Drain Current, V

GS

@ -10V

1,6  

Continuous Drain Current, V

GS

@ -10V

1,6  

Pulsed Drain Current

2  

A

I

D

@T

C

=100

℃  

-50  

A

I

DM  

-200  

A

EAS  

Single Pulse Avalanche Energy

3  

Avalanche Current  

80  

mJ  

A

I

AS  

P

D

@T

C

=25

℃  

T

STG  

-40  

Total Power Dissipation

4  

90  

W

℃

℃

Storage

T

e

mperature Range  

Operating Junction Temperature Range  

-55 to 175  

-55 to 175  

T

J  

Thermal Data  

Symbol  

Parameter  

Typ.  

—  

Max.  

20  

Unit  

℃

/W  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient

1

(t

≦

10S)  

R

θ

JA  

Thermal Resistance Junction-ambient

1

(Steady State)  

Thermal Resistance Junction-case

1  

—  

50  

R

θ

JC  

—  

1.6  

1

V

e

r 2.0  

HSBA3031  

P-Ch 30V Fast Switching MOSFETs  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=-250uA  

Min.  

-30  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

V

GS

=-10V , I

D

=-20A  

6

7.2  

12  

m



 

m

  

V

R

DS(ON)  

Static Drain-Source On-Resistance

2  

Gate Threshold Voltage  

V

GS

=-4.5V , I

D

=-15A  

—  

9.5  

—  

V

GS(th)  

I

DSS  

V

GS

=V

DS

, I

D

=-250uA  

V

DS

=-24V , V

GS

=0V , T

J

=25

℃  

V

DS

=-24V , V

GS

=0V , T

J

=55

℃  

V

GS

=

±

20V , V

DS

=0V  

-1.2  

—  

-2.5  

-1  

—  

Drain-Source Leakage Current  

uA  

—  

—  

-5  

I

GSS  

Rg  

Gate-Source Leakage Current  

Gate Resistance  

—  

—  

±

100  

—  

—  

nA  

V

DS

=0V , V

GS

=0V , f=1MHz  

—  

1.2  

60  

Ω

Q

g  

Total Gate Charge (-10V)  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

—  

V

DS

=-15V , V

GS

=-10V , I

D

=-18A  

nC  

ns  

Q

gs  

Q

gd  

T

d(on)  

T

r  

—  

9

—  

—  

15  

—  

—  

17  

—  

V

DD

=-15V , V

GS

=-10V , R

G

=3.3



,  

—  

40  

—  

I

D

=-20A  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

—  

55  

—  

—  

13  

—  

C

iss  

C

oss  

C

rss  

Input Capacitance  

—  

3450  

255  

140  

—  

V

DS

=-25V , V

GS

=0V , f=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

—  

—  

—  

—  

Diode Characteristics  

Symbol  

Parameter  

Conditions  

V

G

=V

D

=0V , Force Current  

V

GS

=0V , I

S

=-1A , T

J

=25

℃  

I

F

=-20A , di/dt=100A/µs ,  

T

J

=25

℃  

Min.  

—  

Typ.  

—  

Max.  

-70  

-1.2  

—  

Unit  

A

I

S  

V

SD  

t

rr  

Continuous Source Current

1,5  

Diode Forward Voltage

2  

Reverse Recovery Time  

Reverse Recovery Charge  

—  

—  

V

—  

22  

nS  

nC  

Q

rr  

—  

72  

—  

Note :  

1.The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%  

3.The EAS data shows Max. rating . The test condition is V

DD

=-50V,V

GS

=-10V,L=0.1mH,I

AS

=-40A  

4.The power dissipation is limited by 150

℃

junction temperature  

5.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation  

6.The maximum current rating is package limited.  

2

V

e

r 2.0  

HSBA3031  

P-Ch 30V Fast Switching MOSFETs  

Typical Characteristics  

Fig.2 On-Resistance vs. Gate-Source  

Fig.1 Typical Output Characteristics  

Fig.3 Forward Characteristics of Reverse  

Fig.4 Gate-Charge Characteristics  

Fig.5 Normalized -V

GS(th)

vs. T

J  

Fig.6 Normalized R

DSON

vs. T

J  

3

V

e

r 2.0  

HSBA3031  

P-Ch 30V Fast Switching MOSFETs  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

DUTY=0.5  

0.2  

0.1  

0.1  

0.05  

0.02  

0.01  

P

DM  

T

ON  

SINGLE  

0.01  

0.001  

T

D =

T

ON

/T  

T

Jpeak

=

T

C

+P

D

M

XR

θJC  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Fig.11 Unclamped Inductive Switching  

Fig.10 Switching Time Waveform  

4

V

e

r 2.0  

HSBA3031  

P-Ch 30V Fast Switching MOSFETs  

Ordering Information  

Part Number  

Package code  

Packaging  

HSBA3031  

PR

P

A

K5*6  

3000/Tape&Reel  

5

V

e

r 2.0