HUASHUO-HSBA3115
| Part # | HUASHUO-HSBA3115 |
Download  | HUASHUO-HSBA3115 |
HSBA3115
P-Ch 30V Fast Switching MOSFETs
Description
Product Summary
The HSBA3115 is the high cell density trenched P-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
V
DS
-30
9.8
-59
V
R
DS(ON),max
m
Ω
A
I
D
The HSBA3115 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
PRPAK5X6 Pin Configuration
⚫
⚫
⚫
⚫
⚫
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Rating
Symbol
V
DS
Parameter
Units
10s
Steady State
-30
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
V
GS
±
25
-59
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
-37
A
-18
-11.6
-9.3
A
-14.6
A
-180
153
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
mJ
A
I
AS
-55.4
52.1
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
W
W
℃
℃
Total Power Dissipation
4
5
2
Storage
T
e
mperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
62
25
R
θ
JA
—
R
θ
JC
—
2.4
1
V
e
r 2.0
HSBA3115
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-20A
-0.018
7.8
—
V/
℃
—
9.8
15
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-15A
—
11
V
GS(th)
Gate Threshold Voltage
-1.0
—
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
5.04
—
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
25V , V
DS
=0V
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-30A
—
26.4
33
Q
g
—
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-15A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
10.7
12.8
8
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
17.8
78.4
43.6
3448
508
421
—
ns
I
D
=-15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
IF=-15A , dI/dt=100A/µs ,
T
J
=25
℃
Min.
—
Typ.
—
Max.
-59
-1.2
—
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
V
—
29
nS
nC
Q
rr
—
15
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-55.4A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBA3115
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
13
12
11
10
9
200
I
D
=-30A
180
160
140
120
100
80
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
60
40
8
20
0
7
0
1
2
3
4
5
4
6
8
10
-V
DS
Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
10
12
I
D
=-15A
10
8
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
V
DS
=15V
4
V
DS
=24V
2
0
0.2
0.4
0.6
0.8
1
0
20
40
60
80
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3
V
e
r 2.0
HSBA3115
P-Ch 30V Fast Switching MOSFETs
10000
1000
100
1000.00
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
Coss
Crss
10ms
100ms
DC
0.10
Tc=25
o
C
Single Pulse
0.01
10
0.1
1
10
100
1
5
9
13
17
21
25
-V
DS
, Drain to Source Voltage(V)
-V
DS
(V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
S
I
NGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
HSBA3115
P-Ch 30V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSBA3115
PR
P
A
K5*6
3000/Tape&Reel
5
V
e
r 2.0
