HUASHUO-HSBA4204
| Part # | HUASHUO-HSBA4204 |
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HSBA4204
Dual N-Ch 40V Fast Switching MOSFETs
Description
Product Summary
The HSBA4204 is the high cell density trenched N-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
V
DS
40
V
R
DS(ON),typ
I
D
11.5
m
Ω
30
A
The HSBA4204 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
PRPAK5*6 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
40
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
30
A
20
A
100
A
EAS
Single Pulse Avalanche Energy
3
31
25
mJ
A
I
AS
Avalanche Current
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
2
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62.5
6
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1
V
e
r 2.0
HSBA4204
Dual N-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
40
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
△
BV
DSS
/
△
T
J
BVDSS Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=6A
0.034
11.5
15
—
V/
℃
15
20
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=3A
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-5.64
—
mV/
℃
V
DS
=32V , V
GS
=0V , T
J
=25
℃
V
DS
=32V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=6A
31
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.1
10.7
3.3
4.2
8.6
3.4
25
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=20V , V
GS
=4.5V , I
D
=6A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=12V , V
GS
=10V , R
G
=3.3
—
I
D
=6A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
2.2
1314
120
88
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
30
Unit
A
I
S
Continuous Source Current
1,5
Diode Forward Voltage
2
V
SD
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=25A
4.The power dissipation is limited by 175
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBA4204
Dual N-Ch 40V Fast Switching MOSFETs
Typical Characteristics
22
12
I
D
=6A
V
GS
=10V
10
V
GS
=7V
18
14
10
V
GS
=5V
V
GS
=4.5V
8
6
4
2
0
V
GS
=3V
2
4
6
8
10
0
0.25
0.5
0.75
1
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
6
10
8
V
DS
=20V
I
D
=6A
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0.00
0.25
0.50
0.75
1.00
0
5
10
15
20
25
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSBA4204
Dual N-Ch 40V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P
DM
T
ON
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
