HUASHUO-HSBA4909
| Part # | HUASHUO-HSBA4909 |
Download  | HUASHUO-HSBA4909 |
HSBA4909
N-Ch and P-Ch Fast Switching MOSFETs
Description
Product Summary
The HSBA4909 is the high performance
complementary N-ch and P-ch MOSFE
T
s
w
ith
high cell density, which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
The HSBA4909 meet the RoHS and Green
Product requirement 100% EAS guaranteed
with full function reliability approved.
BVDSS
40V
RDSON
8
mΩ
ID
15A
-15A
-40V
13
mΩ
PRPAK5*6 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
V
N-Ch
P-Ch
V
DS
Drain-Source Voltage
40
±
20
15
-40
±
20
-15
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
V
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
10
-10
A
46
-46
A
EAS
Single Pulse Avalanche Energy
3
76
146
mJ
A
I
AS
Avalanche Current
39
-54
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
36
36
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
3.5
1
V
e
r 2.0
HSBA4909
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
40
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
△
BV
DSS
/
△
T
J
BVDSS Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=12A
0.034
—
—
V/
℃
8
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=10A
—
10
2.5
—
V
GS(th)
Gate Threshold Voltage
1.5
-4.56
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=32V , V
GS
=0V , T
J
=25
℃
V
DS
=32V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
±
100
—
nA
V
DS
=0V , V
GS
=0V , f=1MHz
1.6
19
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=20V , V
GS
=4.5V , I
D
=12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
4.7
8.5
14.5
2.2
77
—
—
—
V
DD
=15V , V
GS
=10V , R
G
=3.3
—
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
4.8
2333
176
136
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
15
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
39
A
—
—
1
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=39A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBA4909
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-40
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
J
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-8A
-0.012
—
—
V/
℃
—
13
20
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-4A
—
—
V
GS(th)
Gate Threshold Voltage
-1.0
—
-1.5
4.32
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-18A
—
24
Q
g
—
29
—
V
DS
=-20V , V
GS
=-4.5V , I
D
=-12A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
7.7
7.6
40
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
35
—
ns
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
100
9.6
3500
323
222
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-15
-1
Unit
A
I
S
Continuous Source Current
1,5
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-54A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
3
V
e
r 2.0
HSBA4909
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.3 Forward Characteristics of Reverse
Fig.2 On-Resistance vs. G-S Voltage
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
4
V
e
r 2.0
HSBA4909
N-Ch and P-Ch Fast Switching MOSFETs
Fig.8 Safe Operating Area
Fig.7 Capacitance
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
5
V
e
r 2.0
HSBA4909
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
Fig.4 Gate-Charge Characteristics
Fig.6 Normalized R
DSON
v.s T
J
Fig.3 Forward Characteristics of Reverse
Fig.5 Normalized V
GS(th)
v.s T
J
6
V
e
r 2.0
HSBA4909
N-Ch and P-Ch Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
7
V
e
r 2.0
