HUASHUO-HSBA6048
| Part # | HUASHUO-HSBA6048 |
Download  | HUASHUO-HSBA6048 |
HSBA6048
N-Ch 60V Fast Switching MOSFETs
Product Summary
Description
The HSBA6048 is the high cell density trenched N-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
V
DS
60
3.6
85
V
R
DS(ON),max
I
D
m
Ω
A
The HSBA6048 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
PRPAK5X6 Pin Configuration
⚫
Super Low Gate Charge
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
V
DS
Drain-Source Voltage
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
±
20
85
V
Gate-Sou
r
ce Voltage
Continuous Drain Current
1,6
Continuous Drain Current
1,6
Pulsed Drain Current
2
A
66
A
240
A
EAS
Single Pulse Avalanche Energy
3
101
mJ
A
I
AS
Avalanche Current
45
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
Storage
T
e
mperature Range
83
W
℃
℃
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
55
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1.5
1
Ver 2.0
HSBA6048
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=10V , I
D
=20A
3.0
4.4
—
3.6
5.4
2.3
1
m
m
V
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=15A
V
GS
=V
DS
, I
D
=250uA
V
DS
=48V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=55
℃
—
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=20A
65
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
0.7
58
—
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=30V , V
GS
=10V , I
D
=20A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
16
—
4
—
18
—
V
DD
=30V , V
GS
=10V , R
G
=3
,
8
—
I
D
=20A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
50
—
10.5
3458
1522
22
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=30V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
55
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
1.2
—
V
—
24
nS
nC
I
F
=20A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
85
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=50V,V
GS
=10V,L=0.1mH,I
AS
=40A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
6.The maximum current rating is package limited.
2
Ver 2.0
HSBA6048
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.4 Gate-Charge Characteristics
Fig.6 Normalized R
DSON
vs T
J
Fig.1 Typical Output Characteristics
Fig.3 Diode Forward Voltage vs. Current
Fig.5 Normalized V
GS(th)
vs T
J
3
Ver 2.0
HSBA6048
N-Ch 60V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
SINGLE
0.01
0.001
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
Ver 2.0
