HUASHUO-HSBA6066
| Part # | HUASHUO-HSBA6066 |
Download  | HUASHUO-HSBA6066 |
HSBA6066
N-Ch 60V Fast Switching MOSFETs
Description
Product Summary
⚫
Advanced Trench MOS Technology
⚫
Low Gate Charge
⚫
Low R
DS(ON)
⚫
100% EAS Guaranteed
⚫
Green Device Available
V
DS
60
4.4
78
V
R
DS(ON),typ
I
D
m
Ω
A
PRPAK5X6 Pin Configuration
Application
⚫
Motor Control.
⚫
DC/DC Converter.
⚫
Synchronous rectifier applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
V
DS
Drain-Source Voltage
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
±
20
78
V
Gate-Sou
r
ce Voltage
Continuous Drain Current
1
Continuous Drain Current
1
Pulsed Drain Current
2
A
57
A
210
A
EAS
Single Pulse Avalanche Energy
3
93
mJ
A
I
AS
Avalanche Current
43
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
Storage
T
e
mperature Range
75
W
℃
℃
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
55
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1.8
1
V
e
r 2.0
HSBA6066
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=10V , I
D
=30A
4.4
6.4
1.65
—
5.2
7.8
2.3
1
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=4.5V , I
D
=20A
V
GS
=V
DS
, I
D
=250uA
V
DS
=48V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=55
℃
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
±
100
—
nA
V
DS
=0V , V
GS
=0V , f=1MHz
1.3
33
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=30V , V
GS
=10V , I
D
=20A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
18
—
6
—
7.5
6
—
V
DD
=30V , V
GS
=10V , R
G
=3.3
,
—
I
D
=20A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
29
—
7.5
1670
438
25
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=30V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
78
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
210
1.2
—
A
V
GS
=0V , I
S
=A , T
J
=25
℃
I
F
=15A , dI/dt=100A/µs ,
T
J
=25
℃
—
—
V
—
23
60
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=43A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBA6066
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
Fig.3 Source Drain Forword Characteristics
diode
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSBA6066
N-Ch 60V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
V
e
r 2.0
HSBA6066
N-Ch 60V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSBA6066
PR
P
A
K5*6
3000/Tape&Reel
5
V
e
r 2.0
