HUASHUO-HSBB0012
| Part # | HUASHUO-HSBB0012 |
Download  | HUASHUO-HSBB0012 |
HSBB0012
N-Ch 100V Fast Switching MOSFETs
Description
Product Summary
V
DS
100
93
V
The HSBB0012 is new generation MOSFET
features low on-resistance and fast switching.
Making it ideal for high efficiency power
management applications.
R
DS(ON),TYP
m
Ω
A
I
D
20
The HSBB0012 meet the RoHS and Green
Product requirement, 100% EAS guaranteed
with full function reliability approved.
PRPAK3*3 Pin Configuration
⚫
⚫
⚫
⚫
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Optimized for fast-switching application
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
100
Units
V
Drain-Source Voltage
V
GS
±
20
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
14
A
80
A
EAS
Single Pulse Avalanche Energy
3
Total Power Dissipation
3
1.8
mJ
W
W
℃
℃
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
21
Total Power Dissipation
3
1.8
Storage
T
e
mperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
65
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
6
1
V
e
r 2.0
HSBB0012
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=5A
0.098
93
—
V/
℃
m
m
V
105
145
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=5A
118
1.8
-4.57
—
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
±
100
—
nA
V
DS
=0V , V
GS
=0V , f=1MHz
4
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
5.4
3.1
0.9
5
—
V
DS
=50V , V
GS
=10V , I
D
=5A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=50V , V
GS
=10V , R
G
=3
3
—
I
D
=10A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
20
—
5
—
C
iss
C
oss
C
rss
Input Capacitance
310
20
—
V
DS
=50V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
3.7
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
20
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
80
A
—
—
1.2
—
V
—
18
48
nS
nC
I
F
=5A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBB0012
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
Fig.2 Transfer Characteristics
Voltage
Fig.1 Typical Output Characteristics
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.5
2.0
1.5
1.0
0.5
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
3
V
e
r 2.0
HSBB0012
N-Ch 100V Fast Switching MOSFETs
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
10us
100us
1ms
10ms
100ms
DC
Coss
Crss
21
0.10
T
C
=25
℃
Single Pulse
10
0.01
1
5
9
13
17
25
0.1
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
HSBB0012
N-Ch 100V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSBB0012
PR
P
A
K3*3
3000/Tape&Reel
5
V
e
r 2.0
