HUASHUO-HSBB3115
| Part # | HUASHUO-HSBB3115 |
Download  | HUASHUO-HSBB3115 |
HSBB3115
Description
Product Summary
V
DS
-30
7.3
-55
V
The HSBB3115 is the high cell density trenched P-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
R
DS(ON),typ
m
Ω
A
I
D
The HSBB3115 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
PRPAK3X3 Pin Configuration
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
-30
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-55
-32
A
A
-200
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
125
mJ
A
I
AS
-50
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
38
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
65
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
2.3
1
V
e
r 2.0
HSBB3115
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=-10V , I
D
=-16A
7.3
11
8.7
13.5
-2.5
-1
R
DS(ON)
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=-4.5V , I
D
=-10A
—
V
GS(th)
I
DSS
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
-1.2
—
—
—
Drain-Source Leakage Current
uA
—
—
-5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-16A
—
45
Q
g
—
30
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-15A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
10
—
—
10.4
9.4
10.2
117
24
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
—
—
ns
I
D
=-15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
3448
508
421
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-50
-1
Unit
A
I
S
Continuous Source Current
1,5
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-50A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBB3115
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSBB3115
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
-V
DS
, Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
D = T
ON
/T
S
I
NGLE PULSE
T
ON
T
T
J
peak = T
C
+ P
DM
x R
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
HSBB3115
Ordering Information
Part Number
Package code
Packaging
HSBB3115
PR
P
A
K3*3
3000/Tape&Reel
5
V
e
r 2.0
