HUASHUO-HSBB4115
| Part # | HUASHUO-HSBB4115 |
Download  | HUASHUO-HSBB4115 |
HSBB4115
P-Ch 40V Fast Switching MOSFETs
Description
Product Summary
The HSBB4115 is the high cell density trenched
P-ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
V
DS
-40
13
V
R
DS(ON),max
m
Ω
A
I
D
-39
The HSBB4115 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
PRPAK3*3 Pin Configuration
⚫
Super Low Gate Charge
100% EAS Guaranteed
Excellent CdV/dt effect decline
Green Device Available
Advanced high cell density Trench
technology
⚫
⚫
⚫
⚫
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-40
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
GS
±
20
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-39
-24
A
A
-150
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
130
mJ
A
I
AS
-51
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
52.1
W
W
℃
℃
Total Power Dissipation
4
1
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
2.4
1
V
e
r 2.0
HSBB4115
P-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-40
—
—
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-18A
-0.023
10.5
15
—
V/
℃
13
20
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-12A
V
GS(th)
Gate Threshold Voltage
-1.6
4.74
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-18A
24
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
7
14
—
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
27.9
7.7
V
DS
=-20V , V
GS
=-4.5V , I
D
=-12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
7.5
—
40
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
35.2
100
9.6
—
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
3500
323
222
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-39
-77
-1
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-51A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSBB4115
P-Ch 40V Fast Switching MOSFETs
Typical Characteristics
18
16
14
12
10
12
I
D
=-12A
10
V
GS
=-10V
GS
=-7V
GS
=-5V
8
6
4
2
0
V
V
V
GS
=-4.5V
V
GS
=-3V
2
4
6
8
10
0
0.25
0.5
0.75
1
-V
GS
(V)
-V
DS
Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
V
DS
=-20V
I
D
=-12A
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
20
40
60
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3
V
e
r 2.0
HSBB4115
P-Ch 40V Fast Switching MOSFETs
10000
1000
100
1000.00
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
Coss
Crss
10ms
100ms
DC
0.10
Tc=25
o
C
Single Pulse
0.01
10
0.1
1
10
100
1
5
9
13
17
21
25
-V
DS
Drain to Source Voltage(V)
-V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
0.01
SINGLE
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
V
e
r 2.0
HSBB4115
P-Ch 40V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSBB4115
PR
P
A
K3*3
3000/Tape&Reel
5
V
e
r 2.0
