HUASHUO-HSCB1216
| Part # | HUASHUO-HSCB1216 |
Download  | HUASHUO-HSCB1216 |
HSCB1216
P-Ch 12V Fast Switching MOSFETs
Description
Product Summary
The HSCB1216 is the high cell density trenched P-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
V
DS
-12
13
V
R
DS(ON),typ
m
Ω
A
I
D
-16
The HSCB1216 meet the RoHS and Green Product
requirement with full function reliability approved.
⚫
⚫
⚫
⚫
Super Low Gate Charge
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
DFN2*2-6L Pin Configurations
Absolute Maximum Ratings
Symbol
Parameter
Rating
-12
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
±
12
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
-16
-12
A
A
-28
A
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
3.5
W
W
℃
℃
Total Power Dissipation
3
2.2
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
36
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
R
θ
JC
—
6.5
1
V
e
r 2.0
HSCB1216
P-Ch 12V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-12
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-4.5V , I
D
=-8A
-0.014
13
—
V/
℃
—
15
23
-1.2
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-2.5V , I
D
=-6A
—
18
V
GS(th)
Gate Threshold Voltage
-0.5
—
-0.75
3.95
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-12V , V
GS
=0V , T
J
=25
℃
V
DS
=-12V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
12V , V
DS
=0V
—
-1
I
DSS
Drain-Source Leakage Current
uA
—
—
-5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-10V , I
D
=-8A
—
32
Q
g
—
13
—
V
DS
=-6V , V
GS
=-4.5V , I
D
=-9A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
3
—
—
4.3
11
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-10V , V
GS
=-4.5V ,
—
31
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
R
G
=3.3
, I
D
=-3A
—
30
—
—
10
—
C
iss
C
oss
C
rss
Input Capacitance
—
1300
390
304
—
V
DS
=-6V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-16
Unit
A
I
S
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
I
SM
V
SD
—
—
-28
A
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
