HUASHUO-HSCB20D03
| Part # | HUASHUO-HSCB20D03 |
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HSCB20D03
20V Dual P-CH Fast Switching MOSFETs
Product Summary
Description
The HSCB20D03 is the high cell density trenched
P-ch MOSFE
T
s
, which provides excellent RDSON
and efficiency for most of the small power switching
and load switch applications.
V
DS
-20
90
-3
V
R
DS(ON),typ
I
D
m
Ω
A
The HSCB20D03 meets the RoHS and Green
Product requirement with full function reliability
approved.
DFN2*2-6L-D Pin Configuration
⚫
Super Low Gate Charge
⚫
Green Device Available
⚫
Excellent Cdv/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Drain-Source Voltage
Limit
Units
V
-20
±
12
-3
V
GS
V
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
A
-2
A
-12
A
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
1.5
W
W
℃
℃
Total Power Dissipation
3
0.95
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
R
θ
JA
Thermal Resistance Junction-ambient
1
—
100
℃
/W
1
V
e
r 2.0
HSCB20D03
20V Dual P-CH Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-20
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-4.5V , I
D
=-3.0A
-0.01
90
—
V/
℃
—
100
130
-1.2
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-2.5V , I
D
=-2.0A
—
110
-0.75
2.98
—
V
GS(th)
Gate Threshold Voltage
-0.5
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-16V , V
GS
=0V , T
J
=25
℃
V
DS
=-16V , V
GS
=0V , T
J
=55
℃
—
-1
I
DSS
Drain-Source Leakage Current
uA
—
—
-5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-2.8A
—
5
Q
g
—
3.3
0.66
0.91
11
—
V
DS
=-10V , V
GS
=-4.5V , I
D
=-3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-10V , V
GS
=-4.5V , R
G
=60
I
D
=-3A, R
L
=10
—
6
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
23
—
—
8
—
C
iss
C
oss
C
rss
Input Capacitance
—
331
64
—
V
DS
=-10V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
37
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-3
Unit
A
I
S
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
I
SM
V
SD
—
—
-12
-1
A
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
