HUASHUO-HSCC8204
| Part # | HUASHUO-HSCC8204 |
Download  | HUASHUO-HSCC8204 |
HSCC8204
Dual N-Ch Fast Switching MOSFETs
Product Summary
General Description
V
DS
20
9
V
The HSCC8204 is the low RDSON trenched N-
CH MOSFE
T
s
w
ith robust ESD protection. This
product is suitable for Lithium-ion battery pack
applications.
R
DS(ON),max
I
D
m
Ω
A
9.5
The HSCC8204 meet the RoHS and Green
Product requirement with full function reliability
approved.
DFN2x3 Pin Configuration
⚫
Low drain-source ON resistance
⚫
Green Device Available
⚫
ESD Protected Embedded
Pin1
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
20
Units
V
Drain-Source Voltage
V
GS
±
12
V
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
9.5
A
7.6
A
60
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
1
1.56
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
R
θ
JA
—
80
℃
/W
V
e
r 2.0
1
HSCC8204
Dual N-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
6.3
6.5
6.7
7.0
8.0
0.45
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=4.5V , I
D
=5A
7.8
8.0
8.2
9.0
10.5
—
9
V
GS
=4.0V , I
D
=5A
9.5
10
11.2
13.5
1.5
1
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=3.7V , I
D
=5A
V
GS
=3.1V , I
D
=5A
V
GS
=2.5V , I
D
=5A
V
GS(th)
I
DSS
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250uA
V
DS
=16V , V
GS
=0V , T
J
=25
℃
V
DS
=16V , V
GS
=0V , T
J
=55
℃
V
—
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
8V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
10
—
uA
S
V
DS
=5V , I
D
=5.5A
—
38
Q
g
—
22
—
V
DS
=15V , V
GS
=4.5V , I
D
=5.5A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
3.1
8.2
10
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=15V , V
GS
=4.5V , R
G
=6
—
39.5
65
—
ns
I
D
=5.5A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
30
—
C
iss
C
oss
C
rss
Input Capacitance
—
1647
170
148
—
V
DS
=10V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=9.5A , T
J
=25
℃
Min.
—
Typ.
—
Max.
9.5
60
Unit
A
I
S
Continuous Source Current
1
Pulsed Source Current
2
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper, t
≤
10s.
2.The data tested by pulsed , pulse width
≦
10us , duty cycle
≦
1%
V
e
r 2.0
2
HSCC8204
Dual N-Ch Fast Switching MOSFETs
Typical Characteristics
I
D
=5.5A
V
=5
V
GS
=
V
GS
=3
V
GS
=2
-V
DS
, Drain-to-Source Voltage
(V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
V
DS
=15
V
I
D
=5.5
Q
G
,
T
o
tal Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
V
e
r 2.0
3
HSCC8204
Dual N-Ch Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
0.01
0.001
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
A
+P
D
M
XR
θJA
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
V
e
r 2.0
4
HSCC8204
Dual N-Ch Fast Switching MOSFETs
DFN2x3 Package Outline Dimensions
V
e
r 2.0
5
