HUASHUO-HSH0026
| Part # | HUASHUO-HSH0026 |
Download  | HUASHUO-HSH0026 |
HSH0026
N-Ch 100V Fast Switching MOSFETs
Description
Product Summary
The HSH0026 is the high cell density trenched N-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
V
DS
100
16
V
R
DS(ON),typ
I
D
m
Ω
A
50
The HSH0026 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
TO263 Pin Configuration
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent Cdv/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
Units
V
DS
V
GS
Drain-Source Voltage
V
V
±
20
50
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
22
A
75
A
EAS
Single Pulse Avalanche Energy
3
780
mJ
A
I
AS
Avalanche Current
18
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
62.5
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
50
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
(t
≦
10S)
—
—
R
θ
JA
Thermal Resistance Junction-ambient
1
(Steady State)
2
1
V
e
r 2.0
HSH0026
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
△
BV
DSS
/
△
T
J
BVDSS Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=9A
0.08
16
—
V/
℃
22
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=7A
20
28
V
GS(th)
Gate Threshold Voltage
—
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-5.5
—
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
10
I
DSS
Drain-Source Leakage Current
uA
—
100
±
100
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
nA
S
V
DS
=5V , I
D
=9A
28
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.6
36
—
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
V
DS
=80V , V
GS
=10V , I
D
=7A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
5
10
11.5
29
V
DD
=50V , V
GS
=10V , R
G
=3.3
I
D
=7A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
42
18
C
iss
C
oss
C
rss
Input Capacitance
1930
245
125
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
50
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
1.2
—
V
—
48
nS
nC
I
F
=7A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
29
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSH0026
N-Ch 100V Fast Switching MOSFETs
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
V
DS
=80
V
I
=7A
Q
G
,
T
o
tal Gate Charge (nC)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSH0026
N-Ch 100V Fast Switching MOSFETs
100us
1ms
10m
100
T
A
=25
o
C
D
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P
DM
T
ON
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
d(off)
T
f
T
off
T
on
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
