HUASHUO-HSH15810
| Part # | HUASHUO-HSH15810 |
Download  | HUASHUO-HSH15810 |
HSH15810
N-Ch 100V Fast Switching MOSFETs
Product Summary
General Description
V
DS
100
3.7
V
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low RDS
(ON)
⚫
Advanced high cell density Trench
technology
R
DS(ON),typ
I
D
m
Ω
A
120
TO263 Pin Configuration
Applications
⚫
MOTOR Driver.
⚫
BMS.
⚫
High frequency switching and
synchronous rectification.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
100
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1,6
Continuous Drain Current, V
GS
@ 10V
1,6
Pulsed Drain Current
2
120
100
A
A
480
A
EAS
Single Pulse Avalanche Energy
3
196
mJ
A
I
AS
Avalanche Current
28
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
227
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
0.5
V
e
r 2.0
1
HSH15810
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
R
DS(ON)
V
GS(th)
V
GS
=10V , I
D
=30A
3.7
3.0
—
4.5
4.0
1
m
V
V
GS
=V
DS
, I
D
=250uA
2.0
—
V
DS
=100V , V
GS
=0V , T
J
=25
℃
V
DS
=100V , V
GS
=0V , T
J
=125
℃
I
DSS
Drain-Source Leakage Current
uA
—
—
10
±
100
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
nA
S
V
DS
=5V , I
D
=30A
—
50
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
1
—
Qg
T
o
tal Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
72
—
V
DS
=50V , V
GS
=10V , I
D
=20A
nC
ns
Qgs
Qgd
Td(on)
Tr
—
28
—
—
15
—
—
35
—
V
DD
=50V , V
GS
=10V , R
G
=3.0
,
—
18
—
I
D
=20A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
—
45
—
—
55
—
Ciss
Coss
Crss
Input Capacitance
—
4725
609
14
—
V
DS
=50V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=50A , T
J
=25
℃
I
F
=30A , dI/dt=100A/µs ,
T
J
=25
℃
Min.
—
Typ.
—
Max.
120
1.3
—
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
V
—
70
nS
nC
Q
rr
—
170
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.5mH,I
AS
=28A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
6.Package limitation current.
V
e
r 2.0
2
HSH15810
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.1 Typical Output Characteristics
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
Fig.6 Normalized R
DSON
vs T
J
Fig.5 Normalized V
TH
vs T
J
V
e
r 2.0
3
HSH15810
N-Ch 100V Fast Switching MOSFETs
Fig.8 Safe Operating Area
Fig.7 Capacitance
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
V
e
r 2.0
4
