HUASHUO-HSH80P10
| Part # | HUASHUO-HSH80P10 |
Download  | HUASHUO-HSH80P10 |
HSH80P10
P-Ch 100V Fast Switching MOSFETs
Product Summary
Description
The HSH80P10 uses advanced trench MOSFET
technology to provide excellent R
DS(ON)
and gate
charge for use in a wide variety of other
applications.
V
DS
-100 V
R
DS(ON),typ
I
D
20
m
Ω
-80
A
The HSH80P10 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
TO-263 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Portable equipment and battery
powered systems
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-100
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-80
A
-57
A
-225
A
EAS
Single Pulse Avalanche Energy
3
Total Power Dissipation
4
310
mJ
W
℃
℃
P
D
@T
C
=25
℃
T
STG
210
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θ
JC
0.7
1
V
e
r 2.0
HSH80P10
P-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-100
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=-10V , I
D
=-40A
20
28
32
-3
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-40A
—
24
V
GS(th)
I
DSS
I
GSS
Rg
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Resistance
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-100V , V
GS
=0V , T
J
=25
℃
-1.0
—
-1.8
—
V
uA
nA
-50
±
100
—
V
GS
=
±
20V , V
DS
=0V
—
—
V
GS
=
0V , V
DS
=0V,F=1MHz
—
4.7
32
gfs
Forward Transconductance
Total Gate Charge
V
DS
=-10V , I
D
=-10A
—
—
S
Q
g
—
180
44
—
V
DS
=-50V , V
GS
=-10V , I
D
=-20A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
Gate-Source Charge
Gate-Drain Charge
—
—
—
29
—
Turn-On Delay Time
Rise Time
—
16
—
V
DD
=-50V , V
GS
=-10V , R
G
=4
,
—
91
—
I
D
=-20A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
208
110
11660
289
99
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-50V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-40A , T
J
=25
℃
I
F
=-40A , di/dt=-100A/µs ,
T
J
=25
℃
Min.
—
Typ.
—
Max.
-80
-1.3
—
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
V
—
31.2
45
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-80V,V
GS
=-10V,L=0.3mH
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSH80P10
P-Ch 100V Fast Switching MOSFETs
Fig.12 Unclamped Inductive Waveform
Fig.11 Switching Time Waveform
4
V
e
r 2.0
