HUASHUO-HSL10P06
| Part # | HUASHUO-HSL10P06 |
Download  | HUASHUO-HSL10P06 |
HSL10P06
P-Ch 60V Fast Switching MOSFETs
Description
Product Summary
The HSL10P06 is the high cell density trenched P-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
V
DS
-60
70
V
R
DS(ON),max
I
D
m
Ω
A
-10
The HSL10P06 meet the RoHS and Green Product
requirement,100% EAS guaranteed with full
function reliability approved.
SOT223 Pin Configuration
⚫
⚫
⚫
⚫
⚫
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-60
Units
Drain-Source Voltage
V
V
V
GS
±
20
-10
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
I
D
@T
C
=70
℃
-3
A
I
DM
-28
A
I
AS
P
D
@T
A
=25
℃
T
STG
Avalanche Current
-26
A
Total Power Dissipation
4
1.5
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
70
36
R
θ
JC
—
V
e
r 2.0
1
HSL10P06
P-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
J
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-5A
-0.03
55
—
V/
℃
—
70
105
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-3A
—
64
V
GS(th)
Gate Threshold Voltage
-1.0
—
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4.08
—
mV/
℃
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=55
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-10V , I
D
=-2A
—
15
Q
g
—
9.6
3.4
2.62
27.4
19.4
60.2
7.4
1431
99
—
V
DS
=-48V , V
GS
=-4.5V , I
D
=-10A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DS
=-15V , V
GS
=-10V , R
G
=3.3
,
—
—
ns
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
78
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-10
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
-28
A
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-26A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
V
e
r 2.0
2
HSL10P06
P-Ch 60V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSL10P06
SO
T
-223
3000/Tape&Reel
V
e
r 2.0
5
