HUASHUO-HSL6101

HSL6101  

P-Ch 60V Fast Switching MOSFETs  

Description  

Product Summary  

The HSL6101 is the high cell density trenched P-ch  

MOSFE

T

s

, which provide excellent RDSON and  

gate charge for most of the synchronous buck  

converter applications.  

V

DS  

-60  

V

R

DS(ON),max  

I

D  

130

m

Ω  

-4.3  

A

The HSL6101 meet the RoHS and Green Product  

requirement,100% EAS guaranteed with full  

function reliability approved.  

SOT223 Pin Configuration  

⚫

⚫

⚫

⚫

⚫

100% EAS Guaranteed  

Green Device Available  

Super Low Gate Charge  

Excellent CdV/dt effect decline  

Advanced high cell density Trench  

technology  

Absolute Maximum Ratings  

Symbol  

V

DS  

Parameter  

Rating  

-60  

Units  

V

Drain-Source Voltage  

V

GS  

±

20  

V

Gate-Sou

r

ce Voltage  

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

I

DM  

Continuous Drain Current, V

GS

@ -10V

1  

Continuous Drain Current, V

GS

@ -10V

1  

Pulsed Drain Current

2  

-4.3  

A

-3.5  

A

-14  

A

P

D

@T

A

=25

℃  

T

STG  

Total Power Dissipation

4  

2

W

℃

℃

Storage

T

e

mperature Range  

-55 to 150  

-55 to 150  

T

J  

Operating Junction Temperature Range  

Thermal Data  

Symbol  

R

θ

JA  

Parameter  

Typ.  

—  

Max.  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Case

1  

62.5  

10  

R

θ

JC  

—  

V

e

r 2.0  

1

HSL6101  

P-Ch 60V Fast Switching MOSFETs  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

BV

DSS  

Parameter  

Conditions  

V

GS

=0V , I

D

=-250uA  

Min.  

-60  

—  

Typ.  

—  

Max.  

—  

Unit  

V

Drain-Source Breakdown Voltage  

J

BV

DSS

Temperature Coefficient  

△

BV

DSS

/

△

T  

Reference to 25

℃

, I

D

=-1mA  

V

GS

=-10V , I

D

=-2A  

-0.021  

110  

140  

—  

—  

V/

℃  

—  

130  

190  

-2.5  

—  

R

DS(ON)  

Static Drain-Source On-Resistance

2  

m



 

V

GS

=-4.5V , I

D

=-1.5A  

—  

V

GS(th)  

Gate Threshold Voltage  

-1.0  

—  

V

V

GS

=V

DS

, I

D

=-250uA  

△

V

GS(th)  

V

GS(th)

Temperature Coefficient  

4.08  

—  

mV/

℃  

V

DS

=-48V , V

GS

=0V , T

J

=25

℃  

V

DS

=-48V , V

GS

=0V , T

J

=55

℃  

—  

1

I

DSS  

Drain-Source Leakage Current  

uA  

—  

—  

5

V

I

GSS  

gfs  

Gate-Source Leakage Current  

Forward Transconductance  

Total Gate Charge (-4.5V)  

Gate-Source Charge  

Gate-Drain Charge  

—  

—  

±

100  

—  

nA  

S

V

DS

=-10V , I

D

=-2A  

—  

5.8  

5.9  

2.9  

1.8  

10  

Q

g  

—  

—  

V

DS

=-20V , V

GS

=-4.5V , I

D

=-2A  

nC  

Q

gs  

Q

gd  

T

d(on)  

T

r  

—  

—  

—  

—  

Turn-On Delay Time  

Rise Time  

—  

—  

V

DS

=-15V , V

GS

=-10V , R

G

=3.3



,  

—  

17  

—  

ns  

I

D

=-1A  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

—  

22  

—  

—  

21  

—  

C

iss  

C

oss  

C

rss  

Input Capacitance  

—  

715  

51  

—  

V

DS

=-15V , V

GS

=0V , f=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

—  

—  

—  

34  

—  

Diode Characteristics  

Symbol  

Parameter  

Conditions  

V

G

=V

D

=0V , Force Current  

V

GS

=0V , I

S

=-1A , T

J

=25

℃  

Min.  

—  

Typ.  

—  

Max.  

-4  

Unit  

A

I

S  

Continuous Source Current

1,5  

Diode Forward Voltage

2  

V

SD  

—  

—  

-1.2  

V

Note :  

1.The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%  

3.The power dissipation is limited by 150

℃

junction temperature  

4.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

V

e

r 2.0  

2

HSL6101  

P-Ch 60V Fast Switching MOSFETs  

Typical Characteristics  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance v.s Gate-Source  

Fig.4 Gate-charge characteristics  

Fig.3 Forward characteristics of reverse  

Fig.5 Normalized V

GS(th)

v.s T

J  

Fig.6 Normalized R

DSON

v.s T

J  

V

e

r 2.0  

3

HSL6101  

P-Ch 60V Fast Switching MOSFETs  

Fig.8 Safe Operating Area  

Fig.7 Capacitance  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Fig.10 Switching Time Waveform  

Fig.11 Unclamped Inductive Switching  

V

e

r 2.0  

4

HSL6101  

P-Ch 60V Fast Switching MOSFETs  

Ordering Information  

Part Number  

Package code  

Packaging  

HSL6101  

SO

T

-223  

3000/Tape&Reel  

V

e

r 2.0  

5