HUASHUO-HSM01P15
| Part # | HUASHUO-HSM01P15 |
Download  | HUASHUO-HSM01P15 |
HSM01P15
P-Ch 150V Fast Switching MOSFETs
Applications
Product Summary
V
DS
-150 V
⚫
Load Switch.
⚫
⚫
⚫
Power Management.
LED Backlighting.
Networking application.
R
DS(ON),max
I
D
780
m
Ω
-1.3
A
SOP8 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
-150
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
-1.3
-0.89
-4.4
A
A
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
12.5
mJ
A
I
AS
-5
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
2
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θ
JC
40
1
V
e
r 2.0
HSM01P15
P-Ch 150V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-150
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=-10V , I
D
=-1A
V
GS
=-6V , I
D
=-0.5A
650
700
-3.0
5.42
—
780
980
-4.0
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
—
V
GS(th)
Gate Threshold Voltage
-2.0
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-120V , V
GS
=0V , T
J
=25
℃
V
DS
=-120V , V
GS
=0V , T
J
=150
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
30
V
GS
=
±
20V , V
DS
=0V
I
GSS
Rg
Gate-Source Leakage Current
Gate Resistance
—
—
±
100
—
nA
V
DS
=0V , V
GS
=0V , f=1MHz
—
12
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
10.5
3.2
2.3
21
—
V
DS
=-75V , V
GS
=-10V , I
D
=-1A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
—
—
V
DD
=-30V , V
GS
=-10V , R
G
=6
,
—
17
—
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
40
—
—
18
—
C
iss
C
oss
C
rss
Input Capacitance
—
715
21
—
V
DS
=-75V , V
GS
=0V , F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
14
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-1
Unit
A
I
S
Continuous Source Current
1,6
Diode Forward Voltage
2
V
SD
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-50V,V
GS
=-10V,L=1mH,I
AS
=-5A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSM01P15
P-Ch 150V Fast Switching MOSFETs
P-Channel Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSM01P15
P-Ch 150V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
V
e
r 2.0
HSM01P15
P-Ch 150V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSM01P15
SOP-8
2500/Tape&Reel
5
V
e
r 2.0
