HUASHUO-HSM0228
| Part # | HUASHUO-HSM0228 |
Download  | HUASHUO-HSM0228 |
HSM0228
Dual N-Ch 100V Fast Switching MOSFETs
Description
Product Summary
V
DS
100
68
4
V
The HSM0228 is the high cell density trenched N-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
R
DS(ON),max
m
Ω
A
I
D
The HSM0228 meet the RoHS and Green Product
requirement with full function reliability approved.
⚫
⚫
⚫
⚫
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
Drain-Source Voltage
Gate-Sou
r
ce Voltage
100
V
V
V
GS
±
20
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
4
3
A
A
25
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1.5
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
90
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θ
JC
40
1
V
e
r 2.0
HSM0228
Dual N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=4A
0.122
—
—
V/
℃
m
m
V
68
94
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=3A
—
V
GS(th)
Gate Threshold Voltage
—
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4.84
—
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
10
100
±
100
—
I
DSS
Drain-Source Leakage Current
uA
—
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
nA
S
V
DS
=5V , I
D
=4A
14
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.1
12
—
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=50V , V
GS
=10V , I
D
=4A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
2.7
1.7
3.8
26
—
—
—
V
DD
=50V , V
GS
=10V , R
G
=3
—
I
D
=4A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
16
—
8.8
620
105
63
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=25V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
2.5
25
Unit
A
I
S
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSM0228
Dual N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
3
V
e
r 2.0
HSM0228
Dual N-Ch 100V Fast Switching MOSFETs
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
V
e
r 2.0
HSM0228
Dual N-Ch 100V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
SOP-8
Packaging
HSM0228
2500/Tape&Reel
5
V
e
r 2.0
