HUASHUO-HSM24P03
| Part # | HUASHUO-HSM24P03 |
Download  | HUASHUO-HSM24P03 |
HSM24P03
P-Ch 30V Fast Switching MOSFETs
Description
Product Summary
The HSM24P03 is the high cell density trenched P-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
V
DS
-30
3.8
-24
V
R
DS(ON),typ
I
D
m
Ω
A
The HSM24P03 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
⚫
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
⚫
⚫
⚫
⚫
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-30
Units
Drain-Source Voltage
V
V
V
GS
±
20
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-24
A
–
A
-96
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
2.1
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
–
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
(t
≦
10S)
Thermal Resistance Junction-ambient
1
(Steady State)
Thermal Resistance Junction-case
1
—
—
—
60
24
R
θ
JC
1
V
e
r 2.0
HSM24P03
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=-10V , I
D
=-17A
3.8
5.8
-1.6
—
4.8
7.8
-2.2
-1
m
m
V
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=-4.5V , I
D
=-10A
—
V
GS
=V
DS
, I
D
=-250uA
-1.2
—
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
Drain-Source Leakage Current
uA
nA
—
—
-10
±
100
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge (-10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
—
110
15
V
DS
=-15V , V
GS
=-10V , I
D
=-10A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
18
—
—
28
—
V
DD
=-15V , V
GS
=-10V , R
G
=6
,
—
17
—
ns
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
180
73
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
6240
780
410
—
V
DS
=-25V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-24
-1
Unit
A
I
S
Continuous Source Current
1,5
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSM24P03
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Fig.2 Normalized RDSON vs. T
J
Fig.1 Continuous Drain Current vs. T
C
Fig.3 Normalized Vth vs. Tj
Fig.4 Gate Charge Waveform
Fig.5 Normalized Transient Impedance
Fig.6 Maximum Safe Operation Area
3
V
e
r 2.0
HSM24P03
P-Ch 30V Fast Switching MOSFETs
Fig.8 Unclamped Inductive Switching Waveform
Fig.7 Switching Time Waveform
4
V
e
r 2.0
