HUASHUO-HSM4103
| Part # | HUASHUO-HSM4103 |
Download  | HUASHUO-HSM4103 |
HSM4103
P-Ch 40V Fast Switching MOSFETs
Description
Product Summary
V
DS
-40
32
V
The HSM4103 is the high cell density trenched P-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
R
DS(ON),max
I
D
mΩ
A
-8.6
The HSM4103 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
SOP8 Pin Configuration
l
l
l
l
l
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-40
Units
Drain-Source Voltage
V
V
V
GS
±
20
-8
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
I
D
@T
A
=70
℃
-6.9
A
I
DM
-32
A
EAS
Single Pulse Avalanche Energy
3
41
mJ
A
I
AS
P
D
@T
A
=25
℃
T
STG
Avalanche Current
Total Power Dissipation
4
-28.6
1.5
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
R
θJA
Thermal Resistance Junction-Ambient
1
—
50
℃
/W
1
V
e
r 2.0
HSM4103
P-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-40
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-5A
-0.02
—
—
V/
℃
—
32
46
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=-4.5V , I
D
=-4A
—
—
V
GS(th)
Gate Threshold Voltage
-1.2
—
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
3.72
—
V/
℃
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
—
-1
I
DSS
Drain-Source Leakage Current
uA
—
—
-5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-8A
—
10.7
11.5
3.5
3.3
22
Q
g
—
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-1A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
Ω
,
—
15.7
59
—
ns
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
5.5
1415
134
102
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-8
Unit
A
I
S
Continuous Source Current
1,5
Diode Forward Voltage
2
V
SD
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-28.6A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSM4103
P-Ch 40V Fast Switching MOSFETs
Typical Characteristics
12
10
V
GS
=-10V
8
6
4
2
0
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
0
0.5
1
1.5
2
-V
DS
, Drain-to-Source Voltage (V)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
8
10
7.5
5
V
DS
=-20V
I
D
=-1A
6
4
2
0
T
J
=150
℃
T
J
=25
℃
2.5
0
0.2
0.4
0.6
0.8
1
0
5
10
15
20
25
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate Charge Characteristics
2.0
1.5
1.5
1.0
0.5
1
0.5
0
-50
0
50
100
150
-50
0
J
50
100
℃
150
T ,Junction
Temperature (
)
T ,
Junction Temperature (
)
℃
J
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSM4103
P-Ch 40V Fast Switching MOSFETs
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
-V
DS
, Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
T
ON
T
D =
T
ON
/T
0.01
T
Jpeak
=
T
C
+P
D
M
XR
θJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
HSM4103
P-Ch 40V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSM4103
SOP-8
2500/Tape&Reel
5
V
e
r 2.0
