HUASHUO-HSM6303
| Part # | HUASHUO-HSM6303 |
Download  | HUASHUO-HSM6303 |
Dual P-Ch 60V Fast Switching MOSFETs
Description
Product Summary
The HSM6303 is the high cell density trenched P-
ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications.
V
DS
-60
58
-4
V
R
DS(ON),TYP
m
Ω
A
I
D
The HSM6303 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
SOP8 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
-60
Units
V
DS
V
GS
Drain-Source Voltage
V
V
±
20
-4
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
-3
A
-7.5
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
35.4
mJ
A
I
AS
-26.6
1.5
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
85
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θ
JC
36
1
V
e
r2.0
Dual P-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
—
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-3A
-0.03
58
—
V/
℃
70
105
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-2A
75
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4.56
—
mV/
℃
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-3A
15
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
13.5
9.86
3.08
2.95
28.8
19.8
60.8
7.2
—
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=-48V , V
GS
=-4.5V , I
D
=-3A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
1447
97.3
70
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-3.7
-7.5
-1.2
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-26.6A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r2.0
Dual P-Ch 60V Fast Switching MOSFETs
Typical Characteristics
160
12
I
D
=-3A
V
GS
=-3V
10
8
120
80
6
V
GS
=-10V
4
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
2
0
40
0
0.5
1
1.5
2
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
12
10
8
I
D
=-3A
10
8
6
6
T
J
=150
℃
T
J
=25
℃
4
4
2
2
0
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
2.5
1.5
2.0
1.5
1.0
0.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
o
C)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
3
V
e
r2.0
Dual P-Ch 60V Fast Switching MOSFETs
10000
1000
100
10.00
F=1.0MHz
Ciss
100us
1ms
10ms
1.00
0.10
0.01
100ms
Coss
Crss
DC
T
A
=25
o
C
Single Pulse
10
0.01
0.1
1
10
100
1
1
5
9
13
17
21
25
-V
DS
Drain to Source Voltage(V)
-V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
V
e
r2.0
Dual P-Ch 60V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
SOP-8
Packaging
HSM6303
2500/Tape&Reel
5
V
e
r2.0
