HUASHUO-HSM9926
| Part # | HUASHUO-HSM9926 |
Download  | HUASHUO-HSM9926 |
HSM9926
Dual N-Ch 20V Fast Switching MOSFETs
Description
Product Summary
V
DS
20
28
6
V
The HSM9926 is the high cell density trenched N-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
R
DS(ON),max
I
D
mΩ
A
The HSM9926 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
Dual SOP8 Pin Configuration
l
l
l
l
l
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
Drain-Source Voltage
20
±
12
6
V
V
A
A
V
GS
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
4
I
DM
P
D
@T
A
=25
℃
T
STG
Pulsed Drain Current
2
Total Power Dissipation
4
24
A
1.3
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
R
θJA
Thermal Resistance Junction-ambient
1
—
62.5
℃
/W
1
V
e
r 2.0
HSM9926
Dual N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=4.5V , I
D
=6A
22
28
44
1.5
1
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
Ω
V
V
GS
=2.5V , I
D
=5.2A
34
V
GS
=V
DS
, I
D
=250uA
0.9
—
V
DS
=20V , V
GS
=0V , T
J
=25
℃
V
DS
=20V , V
GS
=0V , T
J
=55
℃
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
±
100
—
nA
S
V
DS
=5V , I
D
=6A
47
Q
g
6.2
1.6
1.5
9.6
6.3
30
—
V
DS
=10V , V
GS
=4.5V , I
D
=3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
Turn-On Delay Time
Rise Time
—
V
DD
=10V , V
GEN
=4.5V , R
GEN
=6
Ω
I
D
=1A; R
L
=10
Ω
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
6.5
553
144
120
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=8V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=46A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSM9926
Dual N-Ch 20V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
SOP-8
Packaging
HSM9926
4000/Tape&Reel
5
V
e
r 2.0
