HUASHUO-HSP0018A
| Part # | HUASHUO-HSP0018A |
Download  | HUASHUO-HSP0018A |
HSP0018A
N-Ch 100V Fast Switching MOSFETs
Description
Product Summary
V
DS
100
16
V
The HSP0018A is the high cell density trenched N-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
R
DS(ON),typ
m
Ω
A
I
D
58
The HSP0018A meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
TO220 Pin Configuration
⚫
⚫
⚫
⚫
⚫
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
100
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
58
37
A
I
D
@T
C
=100
℃
A
I
DM
130
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
84
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
41
Total Power Dissipation
4
149
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
0.84
1
V
e
r 2.0
HSP0018A
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
R
DS(ON)
V
GS(th)
V
GS
=10V , I
D
=30A
16
22
4.5
1
m
V
V
GS
=V
DS
, I
D
=250uA
2.5
—
—
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
I
DSS
Drain-Source Leakage Current
uA
—
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
±
100
—
nA
S
V
DS
=5V , I
D
=30A
—
31
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
1.9
27.6
11.4
7.9
16.5
35
3.8
—
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=80V , V
GS
=10V , I
D
=30A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
—
—
V
DD
=50V , V
GS
=10V , R
G
=3.3
,
—
—
I
D
=30A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
17.5
12
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
1890
268
67
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
58
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
130
1.2
—
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
I
F
=30A , dI/dt=100A/µs ,
T
J
=25
℃
—
—
V
—
22
20
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DS
=25V,V
GS
=10V,L=0.1mH,I
AS
=41A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSP0018A
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSP0018A
N-Ch 100V Fast Switching MOSFETs
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.3
0.1
0.1
0.05
P
DM
T
ON
T
0.02
0.01
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
S
I
NGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
