HUASHUO-HSP120N08
| Part # | HUASHUO-HSP120N08 |
Download  | HUASHUO-HSP120N08 |
HSP120N08
N-Ch 80V Fast Switching MOSFETs
Product Summary
Description
V
DS
80
V
The HSP120N08 is the high cell density trenched
N-ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
R
DS(ON),TYP
I
D
4.7
120
m
Ω
A
The HSP120N08 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
TO-220 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Motor Drives
⚫
SR(Synchronous rectification)
⚫
DC/DC Converter
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
80
V
V
±
20
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1,6
Continuous Drain Current, V
GS
@ 10V
1,6
Pulsed Drain Current
2
120
100
A
A
480
A
EAS
Single Pulse Avalanche Energy
3
Total Power Dissipation
4
560
mJ
W
℃
℃
P
D
@T
C
=25
℃
T
STG
220
Storage
T
e
mperature Range
-55 to 175
-55 to 175
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
60
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
0.7
1
V
e
r 2.0
HSP120N08
N-Ch 80V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
80
—
2
Typ.
92
Max.
—
Unit
V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
R
DS(ON)
V
GS(th)
V
GS
=10V , I
D
=50A
4.7
3
5.7
4
m
V
V
GS
=V
DS
, I
D
=250uA
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=64V , V
GS
=0V , T
J
=25
℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
I
DSS
Drain-Source Leakage Current
uA
—
100
±
100
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
nA
S
V
DS
=5V , I
D
=30A
80
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.6
66
—
Qg
T
o
tal Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DD
=40V , V
GS
=10V , I
D
=25A
nC
ns
Qgs
Qgd
Td(on)
Tr
25
—
14
—
20
—
V
DD
=40V , V
GS
=10V , R
G
=3
,
39
—
I
D
=25A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
44
—
22
—
Ciss
Coss
Crss
Input Capacitance
4033
548
35
—
V
DS
=40V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=50A , T
J
=25
℃
I
F
=20A , dI/dt=500A/µs ,
T
J
=25
℃
Min.
—
Typ.
—
Max.
120
1.2
—
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
V
—
60
nS
nC
Q
rr
—
340
—
2
V
e
r 2.0
