HUASHUO-HSP150N02
| Part # | HUASHUO-HSP150N02 |
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HSP150N02
N-Ch 150V Fast Switching MOSFETs
Description
Product Summary
The HSP150N02 is the highest performance
trench N-ch MOSFE
T
s
w
ith extreme high cell
density, which provide excellent RDSON and gate
charge for most of the synchronous buck
converter applications.
V
DS
150
12
V
R
DS(ON),typ
m
Ω
A
I
D
120
The HSP150N02 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
TO220 Pin Configuration
⚫
Power Switching application
⚫
Green Device Available
⚫
Motion control application
⚫
High efficiency synchronous rectification in
SMPS
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
150
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
GS
±
20
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
120
84
A
A
420
A
EAS
Single Pulse Avalanche Energy
3
Total Power Dissipation
3
1010
mJ
W
℃
℃
P
D
@T
C
=25
℃
T
STG
300
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
60
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
0.55
V
e
r 2.0
1
HSP150N02
N-Ch 150V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
150
—
3
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
R
DS(ON)
V
GS(th)
V
GS
=10V , I
D
=60A
12
15
5
m
V
V
GS
=V
DS
, I
D
=250uA
—
V
DS
=150V , V
GS
=0V , T
J
=25
℃
V
DS
=150V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
±
100
—
nA
V
DS
=0V , V
GS
=0V , f=1MHz
3.2
135
29
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=120V , V
GS
=10V , I
D
=60A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
48
—
30
—
V
DD
=75V , V
GS
=10V , R
G
=3
39
—
I
D
=60A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
75
—
55
—
C
iss
C
oss
C
rss
Input Capacitance
5782
569
318
—
V
DS
=25V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
120
420
1.1
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=60A , T
J
=25
℃
I
F
=60A , dI/dt=100A/µs ,
T
J
=25
℃
—
—
V
—
47
93
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.3mH
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
V
e
r 2.0
2
HSP150N02
N-Ch 150V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Capacitance vs.Drain-Source Voltage
Fig.2 Typical Gate Charge vs. Gate-Source Voltage
Fig.3 Typical Source-Drain Diode Forword
Voltage
Fig.4 Maximum Safe Operating Area
Fig.5 Typical Coss Stored Energy
Fig.6 Maximum Avalanche Energy vs.
Draincurrent
V
e
r 2.0
3
HSP150N02
N-Ch 150V Fast Switching MOSFETs
Fig.8 VDS,Drain-to-Source Voltage(V)
Fig.7 VDS, Drain-to-Source Voltage(V)
Fig.9 Maximum Effective Transient Thermal Impedance,Junction-Case
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
V
e
r 2.0
4
