HUASHUO-HSP30N15A
| Part # | HUASHUO-HSP30N15A |
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HSP30N15A
N-Ch 150V Fast Switching MOSFETs
Description
Product Summary
V
DS
150
40
V
The HSP30N15A is the highest performance
trench N-ch MOSFE
T
s
w
ith extreme high cell
density, which provide excellent RDSON and gate
charge for most of the synchronous buck
converter applications.
R
DS(ON),typ
I
D
m
Ω
A
30
The HSP30N15A meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
TO-220 Pin Configuration
⚫
⚫
⚫
⚫
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
150
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
30
18
A
A
4.9
A
3.9
A
60
A
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
3
81
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
60
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1.2
1
V
e
r 2.0
HSP30N15A
N-Ch 150V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
150
—
2
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
R
DS(ON)
V
GS(th)
V
GS
=10V , I
D
=10A
40
56
4
m
V
V
GS
=V
DS
, I
D
=250uA
2.9
—
V
DS
=120V , V
GS
=0V , T
J
=25
℃
V
DS
=120V , V
GS
=0V , T
J
=55
℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge
—
±
100
—
nA
S
V
DS
=5V , I
D
=10A
25
Q
g
23
—
—
V
DS
=75V , V
GS
=10V , I
D
=10A
nC
Q
gs
Q
gd
T
d(on)
T
r
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
5.8
4.2
16
—
—
—
V
DD
=75V , V
GS
=10V , R
G
=3.3
18.6
28.5
6.5
1190
73
ns
I
D
=10A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=75V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
4
—
Diode Characteristics
Symbol
Parameter
Conditions
V
GS
=0V , I
S
=1A , T
J
=25
℃
I
F
=10A , dI/dt=100A/µs ,
T
J
=25
℃
Min.
—
Typ.
—
Max.
1.2
—
Unit
V
V
SD
t
rr
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
45
nS
nC
Q
rr
—
138
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSP30N15A
N-Ch 150V Fast Switching MOSFETs
Typical Characteristics
Fig.2 On-Resistance vs. Gate-Source Voltage
Fig.1 Typical Output Characteristics
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSP30N15A
N-Ch 150V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
