HUASHUO-HSP3105

HSP3105  

General Description  

Product Summary  

The HSP3105 is the high cell density trenched P-  

ch MOSFE

T

s

, which provide excellent RDSON and  

gate charge for most of the synchronous buck  

converter applications.  

V

DS  

-30  

14  

V

R

DS(ON),max  

I

D  

mΩ  

A

-60  

The HSP3105 meet the RoHS and Green Product  

requirement 100% EAS guaranteed with full  

function reliability approved.  

TO-220 Pin Configuration  

l

100% EAS Guaranteed  

Green Device Available  

Super Low Gate Charge  

Excellent CdV/dt effect decline  

Advanced high cell density Trench  

technology  

l

l

l

l

Absolute Maximum Ratings  

Symbol  

V

DS  

Parameter  

Rating  

-30  

Units  

V

Drain-Source Voltage  

V

GS  

±

20  

V

Gate-Sou

r

ce Voltage  

I

D

@T

A

=25

℃  

Continuous Drain Current, V

GS

@ -10V

1  

Continuous Drain Current, V

GS

@ -10V

1  

Pulsed Drain Current

2  

-60  

-38  

A

I

D

@T

A

=70

℃  

A

I

DM  

-150  

A

EAS  

Single Pulse Avalanche Energy

3  

125  

mJ  

A

I

AS  

P

D

@T

A

=25

℃  

T

STG  

Avalanche Current  

Total Power Dissipation

4  

-50  

74  

W

℃

℃

Storage

T

e

mperature Range  

Operating Junction Temperature Range  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

Symbol  

Parameter  

Typ.  

Max.  

Unit  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Ambient

1

(t

≦

10s)  

62  

℃

/W  

—  

R

θJA  

—  

—  

1.68  

24  

℃

/W  

℃

/W  

R

θJC  

Thermal Resistance Junction-Case

1  

V

e

r 2.0  

1

HSP3105  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=-250uA  

Min.  

-30  

—  

Typ.  

Max.  

—  

Unit  

BV

DSS  

Drain-Source Breakdown Voltage  

—  

10  

V

m

Ω

 

V

V

GS

=-10V , I

D

=-30A  

14  

22  

-2.5  

-1  

R

DS(ON)  

V

GS(th)  

I

DSS  

Static Drain-Source On-Resistance

2  

Gate Threshold Voltage  

V

GS

=-4.5V , I

D

=-15A  

—  

16  

V

GS

=V

DS

, I

D

=-250uA  

-1.0  

—  

—  

V

DS

=-24V , V

GS

=0V , T

J

=25

℃  

V

DS

=-24V , V

GS

=0V , T

J

=55

℃  

—  

Drain-Source Leakage Current  

uA  

—  

—  

-5  

V

I

GSS  

gfs  

Gate-Source Leakage Current  

Forward Transconductance  

Gate Resistance  

—  

—  

±

100  

—  

nA  

S

V

DS

=-5V , I

D

=-10A  

—  

30  

R

g  

V

DS

=0V , V

GS

=0V , f=1MHz  

—  

9

—  

Ω

Q

g  

Total Gate Charge (-4.5V)  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

—  

22  

—  

V

DS

=-15V , V

GS

=-4.5V , I

D

=-15A  

nC  

ns  

Q

gs  

Q

gd  

T

d(on)  

T

r  

—  

8.7  

7.2  

8

—  

—  

—  

—  

—  

V

DD

=-15V , V

GS

=-10V , R

G

=3.3

Ω  

—  

73.7  

61.8  

24.4  

2215  

310  

237  

—  

I

D

=-15A  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

—  

—  

—  

—  

C

iss  

C

oss  

C

rss  

Input Capacitance  

—  

—  

V

DS

=-15V , V

GS

=0V , f=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

—  

—  

—  

—  

Diode Characteristics  

Symbol  

Parameter  

Conditions  

V

G

=V

D

=0V , Force Current  

V

GS

=0V , I

S

=-1A , T

J

=25

℃  

Min.  

—  

Typ.  

—  

Max.  

-60  

-1  

Unit  

A

I

S  

Continuous Source Current

1,5  

Diode Forward Voltage

2  

V

SD  

—  

—  

V

Note :  

1.The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%  

3.The EAS data shows Max. rating . The test condition is V

DD

=-25V,V

GS

=-10V,L=0.1mH,I

AS

=-50A  

4.The power dissipation is limited by 150

℃

junction temperature  

5.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

V

e

r 2.0  

2

HSP3105  

12  

10  

8

V

GS

=-10V  

V

GS

=-7V  

V

GS

=-5V  

V

GS

=-4.5V  

6

4

V

GS

=-3V  

2

0

0

0.25  

0.5  

0.75  

1

-V

DS

, Drain-to-Source Voltage (V)  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance vs. G-S

V

o

ltage  

12  

V

DS

=-15V  

I

D

=-10A  

8

4

0

T

J

=150

℃

 

T

J

=25

℃  

0.00  

0.25  

0.50  

0.75  

1.00  

-V

SD

, Source-to-Drain Voltage (V)  

Q

G

,

T

o

tal Gate Charge (nC)  

Fig.3 Source Drain Forward Characteristics  

Fig.4 Gate-charge Characteristics  

2.0  

1.5  

1.0  

0.5  

1.5  

1

0.5  

0

-50  

0

50  

100  

150  

-50  

0

50  

100  

)

150  

T ,

 

Junction Temperature (  

J

)

℃

T ,Junction

 

Temperature (  

℃

J

Fig.5 Normalized V

GS(th)

vs. T

J  

Fig.6 Normalized R

DSON

vs. T

J  

V

e

r 2.0  

3

HSP3105  

10000  

1000  

100  

F=1.0MHz  

Ciss  

100us  

1m  

Coss  

Crss  

10m  

100  

D

T

A

=25

o

C  

10  

1

5

9

13  

17  

21  

25  

-V

DS

, Drain to Source Voltage (V)  

V

DS

(V)  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

DUTY=0.5  

0.2  

0.1  

0.1  

0.01  

0.05  

0.01  

P

DM  

T

ON  

T

D =

T

ON

/T  

SINGLE  

T

Jpeak

=

T

C

+P

D

M

XR

θJC  

0.001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Fig.10 Switching Time Waveform  

Fig.11 Unclamped Inductive Waveform  

V

e

r 2.0  

4