HUASHUO-HSP6024A

HSP6024A  

N-Ch 60V Fast Switching MOSFETs  

Product Summary  

Description  

The HSP6024A is the high cell density trenched  

N-ch MOSFETs, which provide excellent  

RDSON and gate charge for most of the  

synchronous buck converter applications.  

The HSP6024A meet the RoHS and Green  

Product requirement, 100% EAS guaranteed  

with full function reliability approved.  

V

DS  

60  

V

R

DS(ON),max  

I

D  

4.8  

200  

mΩ  

A

TO220 Pin Configuration  

l

Super Low Gate Charge  

100% EAS Guaranteed  

Green Device Available  

Excellent CdV/dt effect decline  

Advanced high cell density Trench  

technology  

l

l

l

l

Absolute Maximum Ratings  

Symbol  

V

DS  

Parameter  

Rating  

60  

Units  

V

Drain-Source Voltage  

V

GS  

Gate-Sou

r

ce Voltage  

±

20  

200  

V

I

D

@T

C

=25

℃  

I

D

@T

C

=25

℃  

I

D

@T

C

=100

℃  

I

DM  

Continuous Drain Current

1  

Continuous Drain Current

,6  

Continuous Drain Current

1,6  

Pulsed Drain Current

2  

A

120  

A

140  

A

340  

A

EAS  

Single Pulse Avalanche Energy

3  

245  

mJ  

A

I

AS  

Avalanche Current  

70  

P

D

@T

C

=25

℃  

P

D

@T

A

=25

℃  

T

STG  

Total Power Dissipation

4  

Total Power Dissipation

4  

Storage

T

e

mperature Range  

260  

W

W

℃

℃

2.02  

-55 to 150  

T

J  

Operating Junction Temperature Range  

-55 to 150  

Thermal Data  

Symbol  

R

θJA  

Parameter  

Typ.  

—  

Max.  

62  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Case

1  

R

θJC  

—  

0.45  

1

V

e

r 2.0  

HSP6024A  

N-Ch 60V Fast Switching MOSFETs  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

BV

DSS  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

60  

—  

2.5  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

Typ.  

—  

Max.  

—  

Unit  

V

Drain-Source Breakdown Voltage  

Static Drain-Source On-Resistance

2  

Gate Threshold Voltage  

R

DS(ON)  

V

GS(th)  

V

GS

=10V , I

D

=30A  

3.8  

4.8  

4.5  

1

m

Ω

 

V

V

GS

=V

DS

, I

D

=250uA  

—  

V

DS

=48V , V

GS

=0V , T

J

=25

℃  

V

DS

=48V , V

GS

=0V , T

J

=55

℃  

—  

I

DSS  

Drain-Source Leakage Current  

uA  

—  

5

V

I

GSS  

gfs  

Gate-Source Leakage Current  

Forward Transconductance  

Gate Resistance  

—  

±

100  

—  

nA  

S

V

DS

=5V , I

D

=30A  

50  

R

g  

V

DS

=0V , V

GS

=0V , f=1MHz  

1.4  

—  

Ω

Q

g  

Total Gate Charge (10V)  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

83.7  

28.6  

29.3  

38.1  

73.3  

51.6  

26.1  

5580  

571  

278  

—  

V

DS

=48V , V

GS

=10V , I

D

=15A  

nC  

ns  

Q

gs  

Q

gd  

T

d(on)  

T

r  

—  

—  

—  

V

DD

=30V , V

GS

=10V , R

G

=3.3

Ω

,  

—  

I

D

=48A  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

—  

—  

C

iss  

C

oss  

C

rss  

Input Capacitance  

—  

V

DS

=15V , V

GS

=0V , f=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

—  

—  

Diode Characteristics  

Symbol  

Parameter  

Conditions  

V

G

=V

D

=0V , Force Current  

V

GS

=0V , I

S

=1A , T

J

=25

℃  

I

F

=30A , di/dt=100A/µs ,  

T

J

=25

℃  

Min.  

—  

Typ.  

—  

Max.  

80  

Unit  

A

I

S  

V

SD  

t

rr  

Continuous Source Current

1,5  

Diode Forward Voltage

2  

Reverse Recovery Time  

Reverse Recovery Charge  

—  

—  

1.2  

—  

V

—  

30  

nS  

nC  

Q

rr  

—  

55  

—  

Note :  

1.The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%  

3.The EAS data shows Max. rating . The test condition is V

DD

=50V,V

GS

=10V,L=0.1mH,I

AS

=70A  

4.The power dissipation is limited by 150

℃

junction temperature  

5.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

6.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.  

2

V

e

r 2.0  

HSP6024A  

N-Ch 60V Fast Switching MOSFETs  

Typical Characteristics  

350  

300  

250  

V

GS

=15V  

200  

150  

100  

50  

V

GS

=10  

V

GS

=8V  

V

GS

=7V  

V

GS

=6.5V  

V

GS

=6V  

0

0

0.5  

1

1.5  

2

2.5  

3

3.5  

4

V

DS

, Drain-to-Source Voltage (V)  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance vs. G-S

V

o

ltage  

180  

150  

120  

90  

V

DS

=4  

T

J

=150

℃

 

T

J

=25

℃  

60  

30  

0

0.2  

0.4  

0.6  

0.8  

1

1.2  

V

SD

, Source-to-Drain Voltage (V)  

Q

G

,

T

o

tal Gate Charge (nC)  

Fig.4 Gate-Charge Characteristics  

Fig.3 Source Drain Forward Characteristics  

2.0  

1.5  

1.0  

0.5  

1.5  

1

0.5  

0

-50  

0

50  

100  

150  

-50  

0

J

50  

100  

℃

150  

T ,

 

Junction Temperature (

 

)  

℃

J

T ,Junction

 

Temperature (  

)

Fig.6 Normalized R

DSON

vs. T

J  

Fig.5 Normalized V

GS(th)

vs. T

J  

3

V

e

r 2.0  

HSP6024A  

N-Ch 60V Fast Switching MOSFETs  

1000.00  

100.00  

10.00  

1.00  

10us  

100us  

1ms  

10ms  

100ms  

DC  

0.10  

T

C

=25

℃

 

Single Pulse  

0.01  

0.1  

1

10  

100  

1000  

V

DS

(V)  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

DUTY=0.5  

0.2  

0.1  

0.1  

0.05  

0.02  

0.01  

P

DM  

T

ON  

0.01  

0.001  

SINGLE  

T

D =

T

ON

/T  

T

Jpeak

=

T

C

+P

D

M

XR

θJC  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

1

2

BV

DSS  

BV

DSS

-V

DD  

EAS=  

BV

DSS  

L x I

AS

2

x  

V

DS  

90%  

V

DD  

I

AS  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

V

GS  

Fig.10 Switching Time Waveform  

Fig.11 Unclamped Inductive Switching  

4

V

e

r 2.0