HUASHUO-HSS1N20
| Part # | HUASHUO-HSS1N20 |
Download  | HUASHUO-HSS1N20 |
HSS1N20
N-Ch 200V Fast Switching MOSFETs
Description
Product Summary
The HSS1N20 is the high cell density trenched
N-ch MOSFE
T
s
, which provides excellent
RDSON and efficiency for most of the small
power switching and load switch applications.
The HSS1N20 meets the RoHS and Green
Product requirement with full function
reliability approved.
V
DS
200
1.9
1
V
Ω
A
R
DS(ON),Max
I
D
SOT-23L Pin Configuration
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent Cdv/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
200
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
GS
±
3
0
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
1
0.8
A
A
6
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
0.71
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
V
e
r 2.0
1
HSS1N20
N-Ch 200V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
200
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=10V , I
D
=1A
1.65
1.85
1.7
—
1.9
2.2
2.5
1
R
DS(ON)
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=0.8A
—
V
GS(th)
I
DSS
V
GS
=V
DS
, I
D
=250uA
1.0
—
V
V
DS
=200V , V
GS
=0V , T
J
=25
℃
V
DS
=200V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
Drain-Source Leakage Current
uA
—
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
±
100
—
nA
S
V
DS
=15V , I
D
=1A
—
8
Q
g
—
12
2.3
3.8
9
—
V
DS
=100V , V
GS
=10V , I
D
=1A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
—
—
V
DD
=100V , V
GS
=10V , R
G
=2.5
—
11
—
ns
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
14
12
145
88
3
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=25V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
1
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
1.2
—
V
—
38
nS
nC
I
F
=1A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
20
—
Note:
1. The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3. The power dissipation is limited by 150
℃
junction temperature
4. The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
V
e
r 2.0
2
HSS1N20
N-Ch 200V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Forward Characteristics of Reverse
Fig.2 Gate-Charge Characteristics
Fig.3 V
GS(th)
vs T
J
Fig.4 Normalized R
DSON
vs T
J
Fig.5 Capacitance
Fig.6 Safe Operating Area
V
e
r 2.0
3
HSS1N20
N-Ch 200V Fast Switching MOSFETs
Fig.7 Normalized Maximum Transient Thermal Impedance
Fig.8 Switching Time Waveform
Fig.9 Gate Charge Waveform
Fig.10 Transfer Characteristics
V
e
r 2.0
4
HSS1N20
N-Ch 200V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSS1N20
SO
T
-23L
3000/Tape&Reel
V
e
r 2.0
5
