HUASHUO-HSS2301C
| Part # | HUASHUO-HSS2301C |
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HSS2301C
P-Ch 20V Fast Switching MOSFETs
Product Summary
Description
The HSS2301C is the high cell density trenched P-
ch MOSFE
T
s
, which provides excellent RDSON
and efficiency for most of the small power switching
and load switch applications.
V
DS
-20
V
R
DS(ON),typ
I
D
130
m
Ω
-2
A
The HSS2301C meet the RoHS and Green Product
requirement with full function reliability approved.
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent Cdv/dt effect decline
⚫
Advanced high cell density Trench
technology
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-20
Units
V
Drain-Source Voltage
V
GS
±
12
V
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
-2
-1.4
A
A
-8
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
145
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1
V
e
r 2.1
HSS2301C
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-20
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=-4.5V , I
D
=-2A
130
170
-0.65
—
150
190
-1.0
-1
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=-2.5V , I
D
=-1A
—
V
GS
=V
DS
, I
D
=-250uA
-0.3
—
V
DS
=-16V , V
GS
=0V , T
J
=25
℃
V
DS
=-16V , V
GS
=0V , T
J
=55
℃
Drain-Source Leakage Current
uA
—
—
-5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-1A
—
5
Q
g
—
4.3
0.7
1
—
V
DS
=-10V , V
GS
=-4.5V , I
D
=-2A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
12
—
V
DD
=-10V , V
GS
=-4.5V , R
G
=3.3
—
20
—
ns
I
D
=-2A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
23
—
—
9
—
C
iss
C
oss
C
rss
Input Capacitance
—
270
54
—
V
DS
=-10V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
44
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-2
Unit
A
I
S
Continuous Source Current
1,4
Diode Forward Voltage
2
V
SD
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.1
HSS2301C
P-Ch 20V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSS2301C
SO
T
-23
3000/Tape&Reel
5
V
e
r 2.1
