HUASHUO-HSS2302B
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HSS2302B
N-Ch 20V Fast Switching MOSFETs
Product Summary
Description
The HSS2302B is the high cell density trenched
N-ch MOSFE
T
s
, which provides excellent
RDSON and efficiency for most of the small
power switching and load switch applications.
The HSS2302B meets the RoHS and Green
Product requirement with full function reliability
approved.
V
DS
20
46
3
V
R
DS(ON),typ
m
Ω
A
I
D
SOT23S Pin Configuration
⚫
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
⚫
⚫
⚫
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
20
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
GS
±
12
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
3
2.2
A
A
10
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
0.71
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
120
65
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1
V
e
r 2.1
HSS2302B
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=4.5V , I
D
=2.5A
46
61
0.65
—
60
85
1.0
1
R
DS(ON)
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=2.5V , I
D
=1A
V
GS(th)
I
DSS
V
GS
=V
DS
, I
D
=250uA
V
DS
=16V , V
GS
=0V , T
J
=25
℃
V
DS
=16V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
12V , V
DS
=0V
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
±
100
—
nA
S
V
DS
=5V , I
D
=2A
5
Q
g
3.5
0.6
0.45
8
—
—
—
—
—
—
—
—
—
—
V
DS
=10V , V
GS
=4.5V , I
D
=2.5A
nC
Q
gs
Q
gd
T
d(on)
T
r
Turn-On Delay Time
Rise Time
V
DD
=10V , V
GS
=4.5V , R
G
=6
7
ns
I
D
=2.5A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
30
7
C
iss
C
oss
C
rss
Input Capacitance
180
39
20
V
DS
=10V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
3
Unit
A
I
S
Continuous Source Current
1,4
Diode Forward Voltage
2
V
SD
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.1
HSS2302B
N-Ch 20V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
5
4
3
2
1
0
T
J
=150
℃
T
J
=25
℃
0
0.3
0.6
0.9
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.1
HSS2302B
N-Ch 20V Fast Switching MOSFETs
1000
100
10
F=1.0MHz
Ciss
Coss
Crss
1
5
9
13
17
21
V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+
P
D
M
x R
θJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
V
e
r 2.1
HSS2302B
N-Ch 20V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSS2302B
SO
T
-23
3000/Tape&Reel
5
V
e
r 2.1
