HUASHUO-HSS2310A
| Part # | HUASHUO-HSS2310A |
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HSS2310A
N-Ch 60V Fast Switching MOSFETs
Product Summary
Description
V
DS
60
80
2.3
V
The HSS2310A is the high cell density trenched N-
ch MOSFE
T
s
, which provides excellent RDSON
and efficiency for most of the small power switching
and load switch applications.
R
DS(ON),typ
m
Ω
A
I
D
The HSS2310A meet the RoHS and Green Product
requirement with full function reliability approved.
SOT23 Pin Configuration
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
60
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
2.3
1.8
A
A
9.2
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1
V
e
r 2.0
HSS2310A
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=2A
0.054
80
—
V/
℃
100
110
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=1A
85
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4.96
—
mV/
℃
V
DS
=48V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
±
100
—
nA
S
V
DS
=5V , I
D
=2A
13
Q
g
5
7.0
2.4
2.7
3.2
13
V
DS
=48V , V
GS
=4.5V , I
D
=2A
nC
Q
gs
Q
gd
T
d(on)
T
r
1.68
1.9
1.6
7.2
25
Turn-On Delay Time
Rise Time
V
DD
=30V , V
GS
=10V , R
G
=3.3
,
ns
I
D
=2A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
50
14.4
511
38
28.8
715
53
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
25
35
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
2.3
9.2
1.2
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
A
—
—
V
—
9.7
5.8
nS
nC
I
F
=2A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature.
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSS2310A
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
100
95
90
85
80
75
10
I
D
=2A
V
GS
=10V
GS
=7V
GS
=5V
V
GS
=4.5V
8
6
4
2
0
V
V
V
GS
=3V
0
0.5
1
1.5
2
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
-50
0
50
100
150
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3
V
e
r 2.0
HSS2310A
N-Ch 60V Fast Switching MOSFETs
1000
100
10
10.00
1.00
0.10
0.01
F=1.0MHz
Ciss
100us
10ms
100ms
Coss
1s
T
A
=25
℃
Crss
21
DC
Single Pulse
0.1
1
10
V
DS
(V)
100
1000
1
5
9
13
17
25
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+
P
D
M
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
V
e
r 2.0
HSS2310A
N-Ch 60V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSS2310A
SO
T
-23L
3000/Tape&Reel
c
5
V
e
r 2.0
