HUASHUO-HSS2312
| Part # | HUASHUO-HSS2312 |
Download  | HUASHUO-HSS2312 |
HSS2312
N-Ch 20V Fast Switching MOSFETs
Description
Product Summary
The HSS2312 is the high cell density trenched N-
ch MOSFE
T
s
, which provides excellent RDSON
and efficiency for most of the small power switching
and load switch applications.
V
DS
20
15
6
V
R
DS(ON),typ
I
D
m
Ω
A
The HSS2312 meet the RoHS and Green Product
requirement with full function reliability approved.
SOT23L Pin Configuration
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent Cdv/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
Drain-Source Voltage
Gate-Sou
r
ce Voltage
20
V
V
V
GS
±
12
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
6
A
5
24
A
A
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
1.4
W
W
℃
℃
Total Power Dissipation
3
0.9
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Max.
Unit
R
θ
JA
Thermal Resistance Junction-ambient
1
90
℃
/W
1
V
e
r2.0
HSS2312
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
—
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
△
BV
DSS
/
△
T
J
BVDSS Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
V
GS
=4.5V , I
D
=6A
0.018
15
—
V/
℃
20
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=2.5V , I
D
=5A
19
28
V
GS(th)
Gate Threshold Voltage
0.7
-3.1
—
1.0
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=16V , V
GS
=0V , T
J
=25
℃
V
DS
=16V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
±
100
—
nA
S
V
DS
=5V , I
D
=4A
10
Q
g
12
—
—
—
—
—
—
—
—
—
—
V
DS
=15V , V
GS
=4.5V , I
D
=4A
nC
Q
gs
Q
gd
T
d(on)
T
r
2.4
1.1
9
Turn-On Delay Time
Rise Time
V
DS
=10V , V
GS
=4.5V , R
G
=6
12
ns
I
D
=6A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
33
36
C
iss
C
oss
C
rss
Input Capacitance
900
220
100
V
DS
=10V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
6
Unit
A
I
S
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
I
SM
V
SD
—
—
24
A
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r2.0
HSS2312
N-Ch 20V Fast Switching MOSFETs
Typical Characteristics
6
4
T
J
=175
℃
T
J
=25
℃
2
0
0
0.3
0.6
0.9
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction
T
e
mperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
1000
100
10
100.00
10.00
1.00
Ciss
100us
10ms
Coss
Crss
100ms
1s
0.10
DC
T
A
=25
℃
F=1.0MHz
Single Pulse
0.01
1
4
7
10
13
16
19
22
0.1
1
10
100
V
DS
Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
3
V
e
r2.0
HSS2312
N-Ch 20V Fast Switching MOSFETs
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+
P
D
M
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
V
e
r2.0
HSS2312
N-Ch 20V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSS2312
SO
T
-23L
3000/Tape&Reel
5
V
e
r2.0
